DSB30C30PB IXYS | Alldatasheet

Document overview

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Technical content

Features / Advantages:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm-values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Low losses typ. max. IFSM IR A mA V 140 IFAV A VF 0.51 RthJC 1.75 K/W VR = TVJ = min. ms (50 Hz), sine Applications:
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters VRRM V30 10TVJV °C= TVJ °C= mA Package: Part number VR = IF =A V TC =1 3 0° C Ptot 70 WTC °C= EAS tbd mJTVJ °C=I AS =A ; L = µ H IAR AVA = tbdf = 10 kHz1.5·VR typ.; TVJ 150 °C-55 High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode V I V RRM FAV F 0.44 TVJ =4 5 ° C 100 DSB 30 C 30PB V A V V30 tp =1 0 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current non-repetitive avalanche energy repetitive avalanche current Conditions Unit (Marking on product) 0.44 TVJ °C= 25 CJ pFjunction capacitance VR = V; f = 1 MHz TVJ = °C 100 125 IF =A 30 TVJ = °C25 V0.66 IF =A 15 IF =A 30 V0.64 VF0 V0.21TVJ = 150 °C r F 13.9 Ωm TO-220AB threshold voltage slope resistance for power loss calculation only rectangular, d = 0.5
  • Industry standard outline
  • Epoxy meets UL 94V-0
  • RoHS compliant IXYS reserves the right to change limits, conditions and dimensi © 2005 IXYS all rights reserved 0614 Data according to IEC 60747and per diode unless otherwise specified

IRMS Aper pin* 35 RthCH K/W0.50 MD Nm0.6mounting torque 0.4 T stg °C150storage temperature -55 Weight g2 C B F A HG L K J D N M E R Q Dim. Millimeter Inches Min. Max. Min. Max. A 12.70 13.97 0.500 0.550 B 14.73 16.00 0.580 0.630 C 9.91 10.66 0.390 0.420 D 3.54 4.08 0.139 0.161 E 5.85 6.85 0.230 0.270 F 2.54 3.18 0.100 0.125 G 1.15 1.65 0.045 0.065 H 2.79 5.84 0.110 0.230 J 0.64 1.01 0.025 0.040 K 2.54 BSC 0.100 BSC M 4.32 4.82 0.170 0.190 N 1.14 1.39 0.045 0.055 Q 0.35 0.56 0.014 0.022 R 2.29 2.79 0.090 0.110 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB F C N60mounting force with clip 20 IXYS reserves the right to change limits, conditions and dimensi © 2005 IXYS all rights reserved 0614 Data according to IEC 60747and per diode unless otherwise specified