DSB20C60PN IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Low Loss and Soft Recovery High Performance Schottky Diode Common Cathode Schottky Diode Gen ² 1 2 3 Part number DSB20C60PN Backside: isolated FAV FVV 0.62 RRM V= V I= A 2x Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters TO-220FP
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Base plate: Plastic overmolded tab
  • Reduced weight
  • Isolation Voltage: V~2500 IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.69 R 4.5 K/ W R min. VRSM V 4T = 25°CVJ T = °CVJ mA35V = VR T = 25°CVJI = AF V T = °CC 110 Ptot 30 WT = 25°CC R K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 0.93 T = 25°CVJ 100 VF0 V0.44T = °CVJ 150 rF 16.1 mΩ V0.62T = °CVJI = AF V 0.82 I = AF 20 I = AF 20 threshold voltage slope resistance for power loss calculation only mA 125 VRRM V60max. repetitive reverse blocking voltage T = 25°CVJ CJ 149junction capacitance V = V12 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJmax. forward surge current V = 0 VR T = °CVJ 150 240 A FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Schottky 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

D S B C PN Part number Diode Schottky Diode ultra low VF Common Cathode TO-220ABFP (3) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm0.6mounting torque 0.4 TVJ °C150virtual junction temperature -55 Weight g2 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N60mounting force with clip 20 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 1.6 1.0 2.5 2.5 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 35 Aper terminal 125-55 terminal to terminal TO-220FP Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 50/60 Hz, RMS; I ≤ 1 mAISOL DSB20C60PN 508864Tube 50DSB20C60PNStandard 2080 2500ISOL Tstg °C150storage temperature -55 threshold voltage V0.44 mΩ V0 max R0 max slope resistance * 13 Equivalent Circuits for Simulation T =VJ I V0 R0 Schottky 150 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Ø P A H Q D E L bb1 c e 123 min max min max A 4.50 4.90 0.177 0.193 A1 2.34 2.74 0.092 0.108 A2 2.56 2.96 0.101 0.117 b 0.70 0.90 0.028 0.035 c 0.45 0.60 0.018 0.024 D 15.67 16.07 0.617 0.633 E 9.96 10.36 0.392 0.408 e H 6.48 6.88 0.255 0.271 L 12.68 13.28 0.499 0.523 L1 3.03 3.43 0.119 0.135 ØP 3.08 3.28 0.121 0.129 Q 3.20 3.40 0.126 0.134 Dim. Millimeters Inches 2.54 BSC 0.100 BS C 1 2 3 Outlines TO-220FP IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved