DSB15IM30UC IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Single Diode Schottky Diode Part number DSB15IM30UC Marking on Product: SFEBUI Backside: cathode FAV FV V 0.44 RRM V = V I = A Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters TO-252 (DPak)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.51 R 2 K/W R min. VRSM V 5T = 25°C VJ T = °C VJ mA 40 V = V R T = 25°C VJ I = A F V T = °C C 130 Ptot 65 WT = 25°C C R K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 0.66 T = 25°C VJ 100 VF0 V0.21 T = °C VJ 150 rF 13.9 mΩ V0.44 T = °C VJ I = A F V 0.64 I = A F 30 I = A F 30 threshold voltage slope resistance for power loss calculation only mA 125 VRRM V30 max. repetitive reverse blocking voltage T = 25°C VJ CJ 292 junction capacitance V = V 24 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 150 300 A FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Schottky 0.50 IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Ratings Z Y Y WW Logo Part number Assembly Line abcdefg Produ ct Marking IXYS Date Code D S B IM UC Part description Diode Schottky Diode ultra low VF Single Diode TO-252AA (DPak) DSA10IM100UC TO-252AA (DPak) 100 Current Rating [A] Reverse Voltage [V] Package Top °C TVJ °C 150 virtual junction temperature -55 Weight g0.3 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N60 mounting force with clip 20 IRMS RMS current 20 Aper terminal 125 -55 DSA15IM150UC DSA15IM200UC TO-252AA (DPak) TO-252AA (DPak) 150 200 TO-252 (DPak) Similar Part Package Voltage class DSA15IM45UC TO-252AA (DPak) 45 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering DSB15IM30UC 519510 Tape & Reel 2500 SFEBUI Standard Tstg °C 150 storage temperature -55 threshold voltage V0.21 mΩ V0 max R0 max slope resistance * 10.7 Equivalent Circuits for Simulation T = VJ I V0 R0 Schottky 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

Outlines TO-252 (DPak) IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

0.001 0.01 0.1 100 1000 0 4 8 12 16 20 0.001 0.01 0.1 1 10 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 40 80 120 160 200 IF(AV) [A] TC [°C] t [s] 0 5 10 15 20 25 30 200 400 600 800 1000 1200 CT [pF] IR [mA] IF [A] VF [V] VR [V] VR [V] ZthJC [K/W] d = 0.5 IF(AV) [A] P(AV) [W] TVJ = 150°C 125°C 25°C 75°C 100°C 125°C TVJ= 25°C Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current I R vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4 Avg: forward current I F(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case 50°C 25°C 150°C TVJ = 175°C d = DC 0.5 0.33 0.25 0.17 0.08 i R thi (K/W) ti (s) 1 0.200 0.0200 2 0.300 0.0001 3 0.500 0.0035 4 0.400 0.0950 5 0.600 0.1100 DC Schottky IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved