DSA90C200HR IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Common Cathode Schottky Diode Gen ² 1 2 3 Part number DSA90C200HR Backside: isolated FAV FVV 0.79 RRM 200 V= V I= A 2x Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters ISO247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~3600 IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.91 R 0.7 K/ W R min. VRSM V 2T = 25°CVJ T = °CVJ mA5V = VR T = 25°CVJI = AF V T = °CC 145 Ptot 215 WT = 25°CC R K/W 200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.10 T = 25°CVJ 125 VF0 V0.49T = °CVJ 175 rF 5.5 mΩ V0.79T = °CVJI = AF V 1.03 I = AF 90 I = AF 90 threshold voltage slope resistance for power loss calculation only mA 125 VRRM V200max. repetitive reverse blocking voltage T = 25°CVJ CJ 394junction capacitance V = V24 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJmax. forward surge current V = 0 VR T = °CVJ 175 600 A 200 FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Schottky 200 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

D S A C 200 HR Part number Diode Schottky Diode low VF Common Cathode ISO247 (3) DSSK60-02A TO-247AD (3) 200 Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm1.2mounting torque 0.8 TVJ °C175virtual junction temperature -55 Weight g6 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N120mounting force with clip 20 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 2.7 4.1 d Spp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 70 Aper terminal 150-55 terminal to terminal ISO247 Similar Part Package Voltage class DSSK60-02AR ISOPLUS247 (3) 200 Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 50/60 Hz, RMS; I ≤ 1 mAISOL DSA90C200HR 508368Tube 30DSA90C200HRStandard 3000 3600ISOL Tstg °C150storage temperature -55 threshold voltage V0.49 mΩ V0 max R0 max slope resistance * 2.9 Equivalent Circuits for Simulation T =VJ I V0 R0 Schottky 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

S Ø P 2x D3 123 L 2x b2 3x b 2x e 2x E2 D E Q A A2 C E3A3 min max min max A 4.70 5.30 0.185 0.209 A1 2.21 2.59 0.087 0.102 A2 1.50 2.49 0.059 0.098 A3 typ. 0.05 typ. 0.002 b 0.99 1.40 0.039 0.055 b2 1.65 2.39 0.065 0.094 b4 2.59 3.43 0.102 0.135 c 0.38 0.89 0.015 0.035 D 20.79 21.45 0.819 0.844 D1 typ. 8.90 typ. 0.350 D2 typ. 2.90 typ. 0.114 D3 typ. 1.00 typ. 0.039 E 15.49 16.24 0.610 0.639 E1 typ. 13.45 typ. 0.530 E2 4.31 5.48 0.170 0.216 E3 typ. 4.00 typ. 0.157 e 5 . 4 6B S C 0 . 2 1 5B S C L 19.80 20.30 0.780 0.799 L1 - 4.49 - 0.177 Ø P 3.55 3.65 0.140 0.144 Q 5.38 6.19 0.212 0.244 S 6 . 1 4B S C 0 . 2 4 2B S C Dim. Millimeter Inches 1 2 3 Outlines ISO247 IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

0.001 0.01 0.1 100 10 30 50 700 2 04 06 0 0.001 0.01 0.1 1 10 0.01 0.1 0 40 80 120 160 0 50 100 150 100 1000 10000 TVJ=175°C 150°C 125°C 100°C 25°C TVJ =2 5 ° C 50°C 75°C IF [A] VF [V] IR [mA] VR [V] VR [V] CT [pF] TC I]C°[ F(AV) [A] P(AV) [W] ZthJH [K/W] t[ s ] Note: All curves are per diode Fig. 1 Max. forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4 Avg. forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to heatsink IF(AV) [A] DC Rthi ti 0.041 0.0002 0.087 0.0065 0.258 0.037 0.486 0.182 0.078 2.43 TVJ = 175°C 125°C 25°C d = 0.5 d = DC 0.5 0.33 0.25 0.17 0.08 Schottky IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved