DSA70C100HB IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Common Cathode Schottky Diode Gen ² 1 2 3 Part number DSA70C100HB Backside: cathode FAV FVV 0.74 RRM 100 V= V I= A 2x Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.92 R 0.7 K/ W R min. VRSM V 680T = 25°CVJ T = °CVJ mA7.5V = VR T = 25°CVJI = AF V T = °CC 150 Ptot 160 WT = 25°CC R K/W 100 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.10 T = 25°CVJ 125 VF0 V0.45T = °CVJ 175 rF 6 mΩ V0.74T = °CVJI = AF V 0.95 I = AF 70 I = AF 70 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V100max. repetitive reverse blocking voltage T = 25°CVJ CJ 406junction capacitance V = V12 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJmax. forward surge current V = 0 VR T = °CVJ 175 550 A 100 FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Schottky 100 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Part No. Logo IXYS abcd Assembly Code ZyywwAssembly Line XXXXXXXXX D S A C 100 HB Part number Diode Schottky Diode low VF Common Cathode TO-247AD (3) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm1.2mounting torque 0.8 TVJ °C175virtual junction temperature -55 Weight g6 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N120mounting force with clip 20 I RMS RMS current 50 Aper terminal 150-55 TO-247 Similar Part Package Voltage class DSA80C100PB TO-220AB (3) 100 Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering DSA70C100HB 502788Tube 30DSA70C100HBStandard Tstg °C150storage temperature -55 threshold voltage V0.45 mΩ V0 max R0 max slope resistance * 3.4 Equivalent Circuits for Simulation T =VJ I V0 R0 Schottky 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

S Ø P Ø P1 D2 123 L 2x b2 3x b 2x e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.215 BSC 5.46 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 1 2 3 Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

0.001 0.01 0.1 100 10 30 5002 0 4 0 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 0 2 04 06 08 0 1 0 0 200 400 600 800 1000 1200 DC 25°C 50°C 75°C 100°C 125°C Single Pulse TVJ=175°C 150°C IF [A] VF [V] IR [mA] VR [V] VR [V] CT [pF] TC [°C] IF(AV) [A] P(AV) [W] t [ms] Note: All curves are per diode Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case IF(AV) [A] TVJ = 150°C 125°C 25°C TVJ =2 5 ° C d=0 . 5 d = DC 0.5 0.33 0.25 0.17 0.08 ZthJC [K/W] Schottky IXYS reserves the right to change limits, conditions and dimensions. 20131031cData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved