DSA50C100QB_1 IXYS | Alldatasheet

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Schottky Diode Gen ² Symbol Definition R a t i n g s Features / Advantages: typ. max. IFSM IR A V 230 I A VF 0.90 R 0.95 K/W VR = 1 2 3 min. t = 10 ms Applications: VRRM V100 0.45TVJV° C = TVJ °C=m A 5 Package: Part number VR = TVJ =° CIF =A V TC = 155°Cd = Ptot 160 WTC °C= TVJ 175 °C-55 V I RRM = 100 TVJ = 45°C DSA 50 C 100 QB V A 100 V100 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 1.07 TVJ °C=2 5 CJ junction capacitance V= V ;12 T 125 VF0 V0.45TVJ = 175°C rF 7.3 Ω f = 1 MHz = °C 25 m V0.72TVJ =° CIF =A V 0.90 IF =A 50 IF =A 50 threshold voltage slope resistance for power loss calculation only Backside: cathode (50 Hz), sine VF = 0.72 V

  • Housing: High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode TO-3P
  • rIndustry standard outline
  • r compatible with TO-247
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ mA 289 pF thermal resistance junction to casethJC rectangular 0.5
  • Very low Vf
  • Extremely low switching losses
  • low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions. 20101129aData according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved

RthCH K/W0.25 MD Nm1.2mounting torque 0.8 Tstg °C150storage temperature -55 Weight g5 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. FC N120mounting force with clip 20 Ordering Delivering Mode Base Qty Code Key Standard Part Name DSA 50 C 100 QB 504033Tube 30 Product Marking Date Code Part No. Logo Order Code IXYS abcd D S A C 100 QB Part number Diode Schottky Diode low VF Common Cathode TO-3P (3) DSA50C100HB DSA60C100PB TO-247AD (3) TO-220AB (3) Similar Part Package Marking on Product DSA50C100QB 100 100 Voltage class Current Rating [A] Reverse Voltage [V] RMS IXYS reserves the right to change limits, conditions and dimensions. 20101129aData according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved

IXYS reserves the right to change limits, conditions and dimensions. 20101129aData according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved

0.0001 0.001 0.01 0.1 10 30 50 700 2 04 06 0 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 0 2 04 06 08 0 1 0 0 200 400 600 800 1000 DC 25°C 50°C 75°C 100°C 125°C Single Pulse TVJ=175°C 150°C IF [A] VF [V] IR [mA] VR [V] VR [V] CT [pF] TC [°C] IF(AV) [A] P(AV) [W] t [s] Note: All curves are per diode Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case IF(AV) [A] TVJ = 150°C 125°C 25°C d= 0 . 5 d = DC 0.5 0.33 0.25 0.17 0.08 ZthJC [K/W] TVJ =2 5 ° C Rthi [K/W] 0.026 0.172 0.227 0.435 0.09 t i [s] 0.0005 0.011 0.072 0.34 1.5 IXYS reserves the right to change limits, conditions and dimensions. 20101129aData according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved