DSA50C100QB IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features / Advantages:
- Very low Vf
- Extremely low switching losses
- Low Irm-values
- Improved thermal behaviour
- High reliability circuit operation
- Low voltage peaks for reduced protection circuits
- Low noise switching
- Low losses typ. max. IFSM IR A mA V 230 IFAV A VF 0.90 RthJC 0.95 K/W VR = TVJ = 123 min. ms (50 Hz), sine Applications:
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters VRRM V100 0.5TVJV °C= TVJ °C= mA Package: Part number VR = IF =A V TC =1 5 5° C Ptot 160 WTC °C= EAS 5m JTVJ °C=I AS =A ; L = µ H IAR AVA = 1f = 10 kHz1.5·VR typ.; TVJ 175 °C-55 High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode V I V RRM FAV F 100 0.72 TVJ =4 5 ° C 10 100 DSA 50 C 100QB V A V 100 V100 tp =1 0 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current non-repetitive avalanche energy repetitive avalanche current Conditions Unit (Marking on product) 0.72 TVJ °C= 25 CJ pFjunction capacitance VR = V; f = 1 MHz TVJ = °C 125 125 IF =A 50 TVJ = °C25 V1.07 IF =A 25 IF =A 50 V0.90 VF0 V0.45TVJ = 175 °C r F 7.3 Ωm TO-3P threshold voltage slope resistance for power loss calculation only rectangular, d = 0.5
- Industry standard outline - compatible with TO-247
- Epoxy meets UL 94V-0
- RoHS compliant IXYS reserves the right to change limits, conditions and dimensi © 2005 IXYS all rights reserved 0614 Data according to IEC 60747and per diode unless otherwise specified
IRMS Aper pin* 50 RthCH K/W0.25 MD Nm1.2mounting torque 0.8 T stg °C150storage temperature -55 Weight g5 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-3P F C N120mounting force with clip 20 IXYS reserves the right to change limits, conditions and dimensi © 2005 IXYS all rights reserved 0614 Data according to IEC 60747and per diode unless otherwise specified