DSA30I150PA IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Schottky Diode Gen ² Symbol Definition R a t i n g s Features / Advantages: typ. max. IFSM IR A V 200 I A VF 0.93 R 0.85 K/W VR = min. t = 10 ms Applications: VRRM V150 0.9TVJV° C = TVJ °C=m A 5 Package: Part number VR = TVJ =° CIF =A V TC = 150°Cd = Ptot 175 WTC °C= TVJ 175 °C-55 V I RRM = 150 TVJ = 45°C DSA 30 I 150 PA V A 150 V150 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 1.09 TVJ °C=2 5 CJ junction capacitance V= V ;12 T 125 VF0 V0.55TVJ = 175°C rF 6 Ω f = 1 MHz = °C 25 m V0.80TVJ =° CIF =A V 0.98 IF =A 60 IF =A 60 threshold voltage slope resistance for power loss calculation only Backside: cathode (50 Hz), sine VF = 0.80 V

  • Housing: High Performance Schottky Diode Low Loss and Soft Recovery Single Diode TO-220
  • rIndustry standard outline
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ mA 289 pF thermal resistance junction to casethJC rectangular 0.5
  • Very low Vf
  • Extremely low switching losses
  • low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions. 20100205bData according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved

RthCH K/W0.50 MD Nm0.6mounting torque 0.4 Tstg °C150storage temperature -55 Weight g2 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. FC N60mounting force with clip 20 Ordering Delivering Mode Base Qty Code Key Standard Part Name DSA 30 I 150 PA 504155Tube 50 XXXXXX YYWWLogo Marking on product DateCode Assembly Code abcdef Product Marking D S A I 150 PA Part number Diode Schottky Diode low VF Single Diode TO-220AC (2) Marking on Product DSA30I150PA Current Rating [A] Reverse Voltage [V] RMS IXYS reserves the right to change limits, conditions and dimensions. 20100205bData according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved

IXYS reserves the right to change limits, conditions and dimensions. 20100205bData according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved

0.0001 0.001 0.01 0.1 51 5 2 501 0 2 0 3 0 0.001 0.01 0.1 1 10 0.1 0 40 80 120 160 200 05 0 1 0 0 1 5 0 100 200 300 400 500 600 700 A TVJ=175°C 150°C 125°C 100°C 25°C d= 0 . 5 d = DC 0.5 0.33 0.25 0.17 0.08 50°C 75°C IF [A] VF [V] IR [mA] VR [V] VR [V] CT [pF] TC [°C] IF(AV) [A] P(AV) [W] ZthJC [K/W] t [s] Note: All curves are per diode Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case at various duty cycles IF(AV) [A] TVJ = 25°C 125°C 150°C TVJ= 25°C DC Rthi [K/W] 0.139 0.176 0.305 0.23 t i [s] 0.00028 0.0033 0.028 0.17 IXYS reserves the right to change limits, conditions and dimensions. 20100205bData according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved