DSA30C60PB IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features / Advantages:
- Very low Vf
- Extremely low switching losses
- Low Irm-values
- Improved thermal behaviour
- High reliability circuit operation
- Low voltage peaks for reduced protection circuits
- Low noise switching
- Low losses typ. max. IFSM IR A mA V 130 IFAV A VF 0.85 RthJC 1.75 K/W VR = TVJ = min. ms (50 Hz), sine Applications:
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters VRRM V60 0.5TVJV °C= TVJ °C= mA Package: Part number VR = IF =A V TC = 150 °C Ptot 85 WTC °C= EAS 0.05 mJTVJ °C=I AS =A ; L =µ H IAR AVA = 0.1f = 10 kHz1.5·VR typ.; TVJ 175 °C-55 High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode V I V RRM FAV F 0.68 TVJ =4 5 ° C 1 100 DSA 30 C 60PB V A V V60 tp =1 0 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current non-repetitive avalanche energy repetitive avalanche current Conditions Unit 0.68 TVJ °C= 25 CJ tbd pFjunction capacitance VR =V ; f = 1 M H ztbd TVJ = °C 125 125 IF =A 30 TVJ = °C25 V0.95 IF =A 15 IF =A 30 V0.78 VF0 V0.44TVJ =1 7 5 ° C r F 11.2 Ωm TO-220AB threshold voltage slope resistance for power loss calculation only rectangular, d = 0.5
- Industry standard outline
- Epoxy meets UL 94V-0
- RoHS compliant Backside: cathode IXYS reserves the right to change limits, conditions and dimensi © 2006 IXYS all rights reserved 0629 Data according to IEC 60747and per diode unless otherwise specified
IRMS Aper pin* 35 RthCH K/W0.50 MD Nm0.6mounting torque 0.4 T stg °C150storage temperature -55 Weight g2 C B F A HG L K J D N M E R Q Dim. Millimeter Inches Min. Max. Min. Max. A 12.70 13.97 0.500 0.550 B 14.73 16.00 0.580 0.630 C 9.91 10.66 0.390 0.420 D 3.54 4.08 0.139 0.161 E 5.85 6.85 0.230 0.270 F 2.54 3.18 0.100 0.125 G 1.15 1.65 0.045 0.065 H 2.79 5.84 0.110 0.230 J 0.64 1.01 0.025 0.040 K 2.54 BSC 0.100 BSC M 4.32 4.82 0.170 0.190 N 1.14 1.39 0.045 0.055 Q 0.35 0.56 0.014 0.022 R 2.29 2.79 0.090 0.110 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB FC N60mounting force with clip 20 IXYS reserves the right to change limits, conditions and dimensi © 2006 IXYS all rights reserved 0629 Data according to IEC 60747and per diode unless otherwise specified