DSA30C200PB IXYS | Alldatasheet

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Schottky Diode Gen ² Symbol Definition R a t i n g s Features / Advantages: typ. max. IFSM IR A V 120 I A VF 0.94 R 1.75 K/W VR = 1 2 3 min. t = 10 ms Applications: VRRM V200 0.25TVJV° C = TVJ °C=m A 2.5 Package: Part number VR = TVJ =° CIF =A V TC = 150°Cd = Ptot 85 WTC °C= TVJ 175 °C-55 V I RRM = 200 TVJ = 45°C DSA 30 C 200 PB V A 200 V200 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 1.10 TVJ °C=2 5 CJ junction capacitance V= V ;24 T 125 VF0 V0.53TVJ = 175°C rF 10.8 Ω f = 1 MHz = °C 25 m V0.78TVJ =° CIF =A V 0.95 IF =A 30 IF =A 30 threshold voltage slope resistance for power loss calculation only Backside: cathode (50 Hz), sine VF = 0.78 V

  • Housing: High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode TO-220
  • rIndustry standard outline
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ mA 67 pF thermal resistance junction to casethJC rectangular 0.5
  • Very low Vf
  • Extremely low switching losses
  • low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions. 20100628Data according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved

RthCH K/W0.50 MD Nm0.6mounting torque 0.4 Tstg °C150storage temperature -55 Weight g2 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit FC N60mounting force with clip 20 Ordering Delivering Mode Base Qty Code Key Standard Part Name DSA 30 C 200 PB 507014Tube 50 XXXXXX YYWWLogo Marking on product DateCode Assembly Code abcdef Product Marking D S A C 200 PB Part number Diode Schottky Diode low VF Common Cathode TO-220AB (3) Marking on Product DSA30C200PB Current Rating [A] Reverse Voltage [V] 1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . In case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increasedby connecting the backside. IXYS reserves the right to change limits, conditions and dimensions. 20100628Data according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved

Dim. Millimeter Inches Min. Max. Min. Max. A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 E 9.91 10.66 0.390 0.420 e 2.54 BSC 0.100 BSC H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 Q 2.54 3.18 0.100 0.125 3x b2 E ØP Q D L 3x b 2x e C A2 H1 A Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. 20100628Data according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved