DSA30C100HB IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Common Cathode Schottky Diode Gen ² 1 2 3 Part number DSA30C100HB Backside: cathode FAV FVV 0.72 RRM 100 V= V I= A 2x Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.91 R 1.75 K/ W R min. VRSM V 250T = 25°CVJ T = °CVJ mA2.5V = VR T = 25°CVJI = AF V T = °CC 150 Ptot 85 WT = 25°CC R K/W 100 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.06 T = 25°CVJ 125 VF0 V0.46T = °CVJ 175 rF 11.7 mΩ V0.72T = °CVJI = AF V 0.90 I = AF 30 I = AF 30 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V100max. repetitive reverse blocking voltage T = 25°CVJ CJ 146junction capacitance V = V12 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJmax. forward surge current V = 0 VR T = °CVJ 175 340 A 100 FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Schottky 100 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Part No. Logo IXYS abcd Assembly Code ZyywwAssembly Line XXXXXXXXX D S A C 100 HB Part number Diode Schottky Diode low VF Common Cathode TO-247AD (3) DSA30C100PB TO-220AB (3) 100 Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm1.2mounting torque 0.8 TVJ °C175virtual junction temperature -55 Weight g6 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N120mounting force with clip 20 I RMS RMS current 50 Aper terminal 150-55 DSA30C100PN TO-220ABFP (3) 100 TO-247 Similar Part Package Voltage class DSA30C100QB TO-3P (3) 100 Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering DSA30C100HB 505053Tube 30DSA30C100HBStandard Tstg °C150storage temperature -55 threshold voltage V0.46 mΩ V0 max R0 max slope resistance * 9.1 Equivalent Circuits for Simulation T =VJ I V0 R0 Schottky 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

S Ø P Ø P1 D2 123 L 2x b2 3x b 2x e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.215 BSC 5.46 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 1 2 3 Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved