DSA300I45NA IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Single Diode Schottky Diode Gen ² Part number DSA300I45NA Backside: Isolated FAV FVV 0.76 RRM 300 V= V I= A Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters SOT-227B (minibloc)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling
  • Isolation Voltage: V~3000 IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.84 R 0.15 K/ W R min. 300 VRSM V 3T = 25°CVJ T = °CVJ mA30V = VR T = 25°CVJI = AF V T = °CC 100 Ptot 830 WT = 25°CC R K/W 300 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.14 T = 25°CVJ 150 VF0 V0.41T = °CVJ 150 rF 1.12 mΩ V0.76T = °CVJI = AF V 300 1.10 I = AF 600 I = AF 600 threshold voltage slope resistance for power loss calculation only mA 125 VRRM V45max. repetitive reverse blocking voltage T = 25°CVJ CJ 16.5junction capacitance V = V5 T = 25°Cf = 1 MHzR VJ nF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJmax. forward surge current V = 0 VR T = °CVJ 150 4.80 k A FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Schottky 0.10 IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved

1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Ratings abcde YYWWZ XXXXXX Product Marking Logo Part No. DateCode Assembly Code Assembly Line D S A 300 I NA Part number Diode Schottky Diode low VF Single Diode SOT-227B (minibloc) DSA300I200NA SOT-227B (minibloc) 200 Current Rating [A] Reverse Voltage [V] Package TVJ °C MD Nm1.5mounting torque 1.1 Tstg °C150storage temperature -40 Weight g30 Symbol Definition typ. max.min.Conditions virtual junction temperature Unit MT Nm1.5terminal torque 1.1 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 150 Aper terminal 150-40 terminal to terminal SOT-227B (minibloc) Similar Part Package Voltage class DSA300I100NA SOT-227B (minibloc) 100 Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 50/60 Hz, RMS; I ≤ 1 mAISOL DSA300I45NA 511251Tube 10DSA300I45NAStandard 2500 3000ISOL threshold voltage V0.41 mΩ V0 max R0 max slope resistance * 0.28 Equivalent Circuits for Simulation T =VJ I V0 R0 Schottky 150°C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved

Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved

[A] VF [V] IF(AV) [A] P(AV) [W] ZthJC [K/W] t[ m s ] Fig. 1 Max. forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4a Power dissipation versus direct output current Fig. 4b and ambient temperature Fi g. 6 Transient thermal impedance junction to case TVJ = 25°C 125°C 150°C 0 40 80 120 160 1 10 100 1000 10000 0.00 0.04 0.08 0.12 0.16 RthHA 0.2 0.4 0.6 0.8 1.0 2.0 04 0 8 0 1 2 0 1 6 0 100 150 200 250 300 350 TC [°C] Fig. 5 Average forward current IF(AV) vs. case temp. TC IF(AV) [A] Tamb [°C] dc = 0.5 0.4 0.33 0.17 0.08 Rthi [K/W] 0.017 0.013 0.02 0.05 0.05 t i [s] 0.01 0.00001 0.01 0.045 0.3 dc = 0.5 0.4 0.33 0.17 Schottky IXYS reserves the right to change limits, conditions and dimensions. 20120907aData according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved