DSA300I100NA IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Single Diode Schottky Diode Part number DSA300I100NA Backside: Isolated FAV FV V 0.88 RRM 300 100 V = V I = A Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters SOT-227B (minibloc)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling
  • Isolation Voltage: V~ 3000 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20171127b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.99 R 0.15 K/W R min. 300 VRSM V 3T = 25°C VJ T = °C VJ mA 30 V = V R T = 25°C VJ I = A F V T = °C C 95 Ptot 830 WT = 25°C C R K/W 300 100 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.30 T = 25°C VJ 150 VF0 V0.53 T = °C VJ 150 rF 1.09 mΩ V0.88 T = °C VJ I = A F V 300 1.21 I = A F 600 I = A F 600 threshold voltage slope resistance for power loss calculation only mA 125 VRRM V100 max. repetitive reverse blocking voltage T = 25°C VJ CJ 4.86 junction capacitance V = V 12 T = 25°C f = 1 MHz R VJ nF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 150 4.80 kA 100 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Schottky 100 0.10 IXYS reserves the right to change limits, condition s and dimensions. 20171127b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Ratings abcd Zyyww XXXXX Product Marking Logo Part No. DateCode Assembly Code Assembly Line D S A 300 I 100 NA Part description Diode Schottky Diode low VF Single Diode SOT-227B (minibloc) DSA300I200NA SOT-227B (minibloc) 200 Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 1.5 mounting torque 1.1 TVJ °C 150 virtual junction temperature -40 Weight g30 Symbol Definition typ. max. min. Conditions operation temperature Unit MT Nm 1.5 terminal torque 1.1 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d Spp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 150 Aper terminal 125 -40 terminal to terminal SOT-227B (minibloc) Similar Part Package Voltage class DSA300I45NA SOT-227B (minibloc) 45 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL DSA300I100NA 509813 Tube 10 DSA300I100NA Standard

3000 ISOL

Tstg °C 150 storage temperature -40 2500 threshold voltage V0.53 mΩ V0 max R0 max slope resistance * 0.25 Equivalent Circuits for Simulation T = VJ I V0 R0 Schottky 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20171127b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, condition s and dimensions. 20171127b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

0.0 0.4 0.8 1.2 100 200 300 400 500 600 20 40 60 80 100 0.0001 0.001 0.01 0.1 100 0 50 100 150 200 250 100 150 200 250 0 50 100 2000 4000 6000 8000 10000 12000 14000 16000 IF [A] VF [V] IR [mA] VR V] V [ R [V] CT [pF] IF(AV) [A] P(AV) [W] ZthJC [K/W] t [ms] Fig. 1 Max. forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4a Power dissipation versus direct output current Fig. 4b and ambient temperature Fig . 6 T ran sien t t he rmal impedan ce jun ction t o case TVJ = 25°C 125°C 150°C TVJ= 25°C 100°C 50°C 25°C 0 40 80 120 160 1 10 100 1000 10000 0.00 0.04 0.08 0.12 0.16 0 40 80 120 160 100 150 200 250 300 350 TC [°C] Fig. 5 Average forward current IF(AV) vs. case temp. TC IF(AV) [A] Tamb [°C] RthHA 0.2 0.4 0.6 0.8 1.0 2.0 dc = 0.5 0.4 0.33 0.17 0.08 dc = 0.5 0.4 0.33 0.17 Rthi [K/W] 0.017 0.013 0.02 0.05 0.05 t i [s] 0.01 0.00001 0.01 0.045 0.3 TVJ=150°C 125°C 75°C Schottky IXYS reserves the right to change limits, condition s and dimensions. 20171127b Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved