DSA2I100SB IXYS | Alldatasheet

Document overview

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Technical content

Features / Advantages:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm-values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Low losses typ. max. IFSM IR A mA V IFAV A VF 0.79 RthJL 25 K/W VR = TVJ = min. ms (50 Hz), sine Applications:
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters
  • Decoupling diode VRRM V100 0.01TVJV° C = TVJ °C= mA Package: Part number VR = IF =A V TL =1 2 5 ° C Ptot 6WTL °C= EAS tbd mJTVJ °C=I AS =A ; L = µ H IAR AVA = tbdf = 10 kHz1.5·VR typ.; TVJ 175 °C-55 High Performance Schottky Diode Low Loss and Soft Recovery Single Diode V I V RRM FAV F 100 0.65 TVJ =4 5 ° C 100 DSA 2 I 100 SB V A V 100 V100 tp =1 0 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to lead* virtual junction temperature total power dissipation max. forward surge current non-repetitive avalanche energy repetitive avalanche current Conditions Unit (Marking on product) 0.65 TVJ °C= 25 CJ 85 pFjunction capacitance VR = V; f = 1 MHz5 TVJ = °C 125 125 IF =A 4 TVJ = °C25 V0.87 IF =A 2 IF =A 4 V0.75 VF0 VTL = 175 °C r F Ωm SMB (DO-214AA) threshold voltage slope resistance for power loss calculation only rectangular, d = 0.5
  • Industry standard outline
  • Epoxy meets UL 94V-0
  • RoHS compliant * mounted on 1 inch square PCB (S2KAB) IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 0615 Data according to IEC 60747 and per diode unless otherwise specified

IRMS Aper pin* RthJA K/W70 MD Nmmounting torque T stg °C150storage temperature -55 Weight g0.1 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance junction to ambient Unit * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines SMB (DO-214AA) F C Nmounting force with clip E A B C H D F G Dim. min max min max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130 0.155 C 1.95 2.20 0.077 0.087 D 2.13 2.44 0.084 0.096 E 5.21 5.59 0.205 0.220 F 0.76 1.52 0.030 0.060 G 0.15 0.31 0.006 0.012 H 2.00 2.20 0.079 0.087 Millimeters Inches IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 0615 Data according to IEC 60747 and per diode unless otherwise specified