DSA20C150PN IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features / Advantages:
- Very low Vf
- Extremely low switching losses
- Low Irm-values
- Improved thermal behaviour
- High reliability circuit operation
- Low voltage peaks for reduced protection circuits
- Low noise switching
- Low losses typ. max. IFSM IR A mA V IFAV A VF 0.88 RthJC 4.50 K/W VR = TVJ = 123 min. ms (50 Hz), sine Applications:
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters VRRM V150 0.3TVJV °C= TVJ °C= mA Package: Part number VR = IF =A V TC =1 4 0° C Ptot 35 WTC °C= EAS tbd mJTVJ °C=I AS =A ; L = µ H IAR AVA = tbdf = 10 kHz1.5·VR typ.; TVJ 175 °C-55 High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode V I V RRM FAV F 150 0.74 TVJ =4 5 ° C 100 DSA 20 C 150PN V A V 150 V150 tp =1 0 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current non-repetitive avalanche energy repetitive avalanche current Conditions Unit (Marking on product) 0.74 TVJ °C= 25 CJ pFjunction capacitance VR = V; f = 1 MHz TVJ = °C 125 125 IF =A 20 TVJ = °C25 V0.99 IF =A 10 IF =A 20 V0.86 VF0 V0.55TVJ = 175 °C r F 11.5 Ωm TO-220FPAB threshold voltage slope resistance for power loss calculation only rectangular, d = 0.5
- Industry standard outline
- Plastic overmolded tab for electrical isolation
- Epoxy meets UL 94V-0
- RoHS compliant IXYS reserves the right to change limits, conditions and dimensi © 2005 IXYS all rights reserved 0614 Data according to IEC 60747and per diode unless otherwise specified
IRMS Aper pin* 35 RthCH K/W0.50 MD Nm0.6mounting torque 0.4 T stg °C150storage temperature -55 Weight g2 ØP A H Q D E L bb1 c e Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220FPAB F C N60mounting force with clip 20 IXYS reserves the right to change limits, conditions and dimensi © 2005 IXYS all rights reserved 0614 Data according to IEC 60747and per diode unless otherwise specified