DSA10I100PM IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Single Diode Schottky Diode Gen ² Part number DSA10I100PM Backside: isolated FAV FVV 0.71 RRM 100 V= V I= A Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters TO-220FP
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Base plate: Plastic overmolded tab
  • Reduced weight
  • Isolation Voltage: V~2500 IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.89 R 4.5 K/ W R min. VRSM V 200T = 25°CVJ T = °CVJ mA2V = VR T = 25°CVJI = AF V T = °CC 140 Ptot 35 WT = 25°CC R K/W 100 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.04 T = 25°CVJ 125 VF0 V0.45T = °CVJ 175 rF 16.1 mΩ V0.71T = °CVJI = AF V 0.87 I = AF 20 I = AF 20 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V100max. repetitive reverse blocking voltage T = 25°CVJ CJ 96junction capacitance V = V12 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJmax. forward surge current V = 0 VR T = °CVJ 175 240 A 100 FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Schottky 100 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

D S A I 100 PM Part number Diode Schottky Diode low VF Single Diode TO-220ACFP (2) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm0.6mounting torque 0.4 TVJ °C175virtual junction temperature -55 Weight g2 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N60mounting force with clip 20 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 3.2 2.7 2.5 2.5 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 35 Aper terminal 150-55 terminal to terminal TO-220FP Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 50/60 Hz, RMS; I ≤ 1 mAISOL DSA10I100PM 503362Tube 50DSA10I100PMStandard 2080 2500ISOL Tstg °C150storage temperature -55 threshold voltage V0.45 mΩ V0 max R0 max slope resistance * 12.9 Equivalent Circuits for Simulation T =VJ I V0 R0 Schottky 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Note: All metal surface are matte pure tin plated except trimmed area. Ø P A H Q D E L bb1 c e min max min max A 4.50 4.90 0.177 0.193 A1 2.34 2.74 0.092 0.108 A2 2.56 2.96 0.101 0.117 b 0.70 0.90 0.028 0.035 b1 1.27 1.47 0.050 0.058 c 0.45 0.60 0.018 0.024 D 15.67 16.07 0.617 0.633 d1 0 1.10 0 0.043 E 9.96 10.36 0.392 0.408 e H 6.48 6.88 0.255 0.271 L 12.68 13.28 0.499 0.523 L1 3.03 3.43 0.119 0.135 ØP 3.08 3.28 0.121 0.129 Q 3.20 3.40 0.126 0.134 Dim. Millimeters Inches 2.54 BSC 0.100 BSC Outlines TO-220FP IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved