DSA10C150UC IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Schottky Diode Common Cathode Schottky Diode Part number DSA10C150UC Marking on Product: SAKAUC Backside: cathode FAV FV V 0.71 RRM 150 V = V I = A2x Features / Advantages: Applications: Package:

  • Very low Vf
  • Extremely low switching losses
  • Low Irm values
  • Improved thermal behaviour
  • High reliability circuit operation
  • Low voltage peaks for reduced protection circuits
  • Low noise switching
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters TO-252 (DPak)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V Symbol Definition Ratings typ. max. IR V I A VF 0.86 R 4.8 K/W R min. VRSM V

100 T = 25°C VJ

T = °C VJ mA 0.9 V = V R T = 25°C VJ I = A F V T = °C C 155 Ptot 30 WT = 25°C C R K/W 150 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 0.93 T = 25°C VJ 125 VF0 V0.54 T = °C VJ 175 rF 19.4 mΩ V0.71 T = °C VJ I = A F V 0.81 I = A F 10 I = A F 10 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V150 max. repetitive reverse blocking voltage T = 25°C VJ CJ 29 junction capacitance V = V 24 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 175 150 A 150 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Schottky 150 0.50 IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

D S A C 150 UC Part description Diode Schottky Diode low VF Common Cathode TO-252AA (DPak) Current Rating [A] Reverse Voltage [V] Package Top °C TVJ °C 175 virtual junction temperature -55 Weight g0.3 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N60 mounting force with clip 20 IRMS RMS current 20 Aper terminal 150 -55 TO-252 (DPak) Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering DSA10C150UC 518381 Tape & Reel 2500 SAKAUC Standard Tstg °C 150 storage temperature -55 threshold voltage V0.54 mΩ V0 max R0 max slope resistance * 6.7 Equivalent Circuits for Simulation T = VJ I V0 R0 Schottky 175 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

Outlines TO-252 (DPak) IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

10 30 50 70 90 110 130 150 0.001 0.01 0.1 0 5 10 15 20 1 10 100 1000 10000 0 40 80 120 160 200 IF(AV) [A] TC [°C] t [ms] 0 20 40 60 80 100 120 140 100 120 140 CT [pF] IR [mA] IF [A] VF [V] VR [V] VR [V] ZthJC [K/W] d = 0.5 IF(AV) [A] P(AV) [W] TVJ = 150°C 125°C 25°C 75°C 100°C 125°C TVJ= 25°C Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current I R vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 4 Avg: forward current I F(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case 50°C 25°C 150°C TVJ = 175°C d = DC 0.5 0.33 0.25 0.17 0.08 i R thi (K/W) ti (s) 1 0.400 0.0150 2 0.700 0.0001 3 1.100 0.0025 4 1.000 0.0100 5 1.600 0.1050 DC Schottky IXYS reserves the right to change limits, condition s and dimensions. 20170911c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved