DS35 IXYS | Alldatasheet
Document overview
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Technical content
Features
G International standard package, JEDEC DO-203 AB (DO-5) G Planar glassivated chips
Applications
G Field supply for DC motors G Power supplies Advantages G Space and weight savings G Simple mounting G Improved temperature and power cycling G Reduced protection circuits Symbol Test Conditions Characteristic Values IR TVJ = TVJM ; VR = VRRM /G163 4m A VF IF = 150 A; TVJ = 25/G176C /G1631.55 V VT0 For power-loss calculations only 0.85 V rT TVJ = TVJM 4.5 m /G87 R thJC DC current 1.05 K/W R thJH DC current 1.25 K/W dS Creepage distance on surface 4.05 mm dA Strike distance through air 3.9 mm a Max. allowable acceleration 100 m/s 2 Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions DS 35 DSI 35 DSA 35 DSAI 35 Rectifier Diode Avalanche Diode A = Anode C = Cathode DO-203 AB DS DSI DSA DSAI C A A C 1/4-28UNF
© 2000 IXYS All rights reserved 2 - 2 23 4 5 6 7 8 911 0 2000 4000 6000 8000 1000 10000 10-3 10-2 10-1 100 100 200 300 400 500 600 700 800 900 1000 0.5 1.0 1.5 2.0 100 150 200 250 0 2 04 06 08 0 100 0 50 100 150 2000 10-3 10-2 10-1 100 101 102 0.0 0.4 0.8 1.2 1.6 2.0 I2tIFSM IF A VF t s t ms PF W IF(AV)M A Tamb t s ZthJH K/W A2s 0 40 80 120 160 200 IF(AV)M Tc A V A R thJH for various conduction angles d: dR thJH (K/W) DC 1.25 180/G176 1.37 120/G176 1.47 60/G176 1.74 30/G176 2.08 Constants for ZthJH calculation: iR thi (K/W) t i (s) 1 0.10 0.0012 2 0.25 0.1181 3 0.70 0.6540 4 0.20 2.0 DS 35 DSI 35 DSA 35 DSAI 35 Fig. 6 Transient thermal impedance junction to heatsink Fig. 1 Forward characteristics Fig. 2 Surge overload current IFSM : crest value, t: duration Fig. 3 I2t versus time (1-10 ms) Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 180° sine TVJ = 180°C TVJ = 180°C TVJ = 45°C VR = 0 V50Hz, 80%/G32VRRM DC 180° sin 120° 60° 30° typ. lim. TVJ= 180°C TVJ= 25°C TVJ = 45°C R thJA :