DMA90U1800LB IXYS | Alldatasheet

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Technical content

Surface Mount Power Device ISOPLUS™ 3~ Rectifier Bridge Standard Rectifier 4/5/6 7 1/2/38 9 Part number DMA90U1800LB Backside: isolated Features / Advantages: Applications: Package:

  • Rectifier diode
  • Isolated back surface
  • Low coupling capacity between pins and heatsink
  • Enlarged creepage towards heatsink
  • Application friendly pinout
  • Low inductive current path
  • High reliability
  • Line rectifying 50/60 Hz
  • Drives
  • SMPS
  • UPS SMPD
  • Industry convenient outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~3000 RRM 1800 I9 0 FSM 350 DAV V = V A A Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130523aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. IR V I A VF 1.26 R 1.1 K/W R min. VRSM V 40T = 25°CVJ T = °CVJ mA1.5V = VR T = 25°CVJI = AF V T = °CC 110 Ptot 135 WT = 25°CC R K/W0.4 1800 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.79 T = 25°CVJ 150 VF0 V0.81T = °CVJ 175 rF 12.7 mΩ V1.20T = °CVJI = AF V 1.93 I = AF 90 I = AF 90 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V1800max. repetitive reverse blocking voltage T = 25°CVJ CJ 11junction capacitance V = V;400 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJmax. forward surge current T = °CVJ 150 I²t T = 45°Cvalue for fusing T = °C150 V = 0 VR V = 0 VR V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °CVJ 175 350 380 450 425 A A A A 300 320 615 600 1800 DAV d =rectangular ⅓ bridge output current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Rectifier 1900 IXYS reserves the right to change limits, conditions and dimensions. 20130523aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

1 to 19: Part # 20 to 23: Date Code 24 to 25: Assembly line 26 to 31: Lot # 32: Split Lot 33 to 36: Individual # ~ ~ ~ Assembly line D M A U 1800 LB Part number Diode Standard Rectifier (up to 1800V) 3~ Rectifier Bridge SMPD-B Current Rating [A] Reverse Voltage [V] Package Top °C TVJ °C175virtual junction temperature -55 Weight g8.5 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N130mounting force with clip 40 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 1.6 4.0 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 100 Aper terminal 150-55 terminal to terminal SMPD DMA90U1800LB-TRR Tape & Reel 200 511740DMA90U1800LB Delivery Mode Quantity Code No.Part Number Marking on Product Alternative Ordering 50/60 Hz, RMS; I ≤ 1 mAISOL DMA90U1800LB 511747Blister 45DMA90U1800LBStandard 3000ISOL Tstg °C150storage temperature -55 2500 threshold voltage V0.81 mΩ V0 max R0 max slope resistance * 10.1 Equivalent Circuits for Simulation T =VJ I V0 R0 Rectifier 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20130523aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

32,7 0,5 2 \0,05(3x) 18 \0,1 2,75 \0,1 5,5 \0,1 13,5 \0,1 16,25 \0,1 19 \0,1 25 \0,2 0,5 \0,1 9 \0,1 0,2 1 \0,05(6x) 5,5 0,12) A 0,55 \0,1 4 \`0,05 4,85 0,2 0,2 c0,05 A(8:1) 0 0,15+ c0,1 seating plane Pin number Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating 4/5/6 7 1/2/38 9 Outlines SMPD IXYS reserves the right to change limits, conditions and dimensions. 20130523aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

VF [V] IF [A] 100 10-3 10-2 10-1 100 100 150 200 250 300 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 50 1 02 03 04 0 0 25 50 75 100 125 150 175 100 IFSM [A] t[ s ] t[ m s ] I2t [A2s] Ptot [W] IdAVM [A] TA [°C] IF(AV)M [A] TC [°C] ZthJC [K/W] t[ m s ] Constants for ZthJC calculation: iR th (K/W) t i (s) 1 0.030 0.0003 2 0.072 0.0045 3 0.092 0.0530 4 0.606 0.0520 5 0.300 0.4000 0.8 x V RRM 50 Hz TVJ =4 5 ° C VR =0 V RthJA: 0.6 KW 0.8 KW 1K W 2K W 4K W 8K W DC = 0.5 0.4 0.33 0.17 0.08 TVJ = 125°C 150°C TVJ =2 5 ° C TVJ = 150°C TVJ =1 5 0 ° C Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode Fig. 3 I 2t vs. time per diode Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode Fig. 6 Transient thermal impedance junction to case vs. time per diode DC = 0.5 0.4 0.33 0.17 0.08 TVJ =4 5 ° C Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130523aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved