DMA80I1600HA IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 5

Technical content

Backside: cathode FAV FV V 1.55 RRM 1600 V = V I = A Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very low forward voltage drop
  • Improved thermal behaviour
  • High commutation robustness
  • High surge capability
  • Diode for main rectification
  • For single and three phase bridge configurations TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 Information furnished is believed to be accurate an d reliable. However, users should independently evaluate the suitability of and test each product s elected for their own applications. Littelfuse prod ucts are not designed for, and may not be used in, all applications. Read comp lete Disclaimer Notice at Disclaimer Notice www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, condition s and dimensions. 20211026b Data according to IEC 60747and per semiconductor un less otherwise specified © 2021 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. IR V I A VF 1.17 R 0.35 K/W R min. VRSM V

40 T = 25°C VJ

T = °C VJ mA 1.5 V = V R T = 25°C VJ I = A F V T = °C C 125 Ptot 430 WT = 25°C C R K/W 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.22 T = 25°C VJ 150 VF0 V0.82 T = °C VJ 175 rF 4.8 mΩ V1.55 T = °C VJ I = A F V 1.59 I = A F 160 I = A F 160 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V1600 max. repetitive reverse blocking voltage T = 25°C VJ CJ 43 junction capacitance V = V; 400 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °C VJ 175 1.30 1.41 6.11 5.94 kA kA kA kA 1.11 1.20 8.45 8.21 1600 FAV 180° sine average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Rectifier 1700 0.25 IXYS reserves the right to change limits, condition s and dimensions. 20211026b Data according to IEC 60747and per semiconductor un less otherwise specified © 2021 IXYS all rights reserved

Lot# yywwZ Location XXXXXXXXX D M A I 1600 HA Part description Diode Standard Rectifier (up to 1800V) Single Diode TO-247AD (2) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 1.2 mounting torque 0.8 TVJ °C 175 virtual junction temperature -55 Weight g6 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N120 mounting force with clip 20 IRMS RMS current 70 Aper terminal 150 -55 TO-247 Similar Part Package Voltage class DMA80IM1600HB TO-247AD (3) 1600 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering DMA80I1600HA Tube 30 DMA80I1600HA Standard Tstg °C 150 storage temperature -55 threshold voltage V0.82 mΩ V0 max R0 max slope resistance * 2.6 Equivalent Circuits for Simulation T = VJ I V0 R0 Rectifier °C * on die level 175 IXYS reserves the right to change limits, condition s and dimensions. 20211026b Data according to IEC 60747and per semiconductor un less otherwise specified © 2021 IXYS all rights reserved

S Ø P Ø P1 D2 1 2 3 L 2x b2 2x b e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.430 BSC 10.92 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 Outlines TO-247 IXYS reserves the right to change limits, condition s and dimensions. 20211026b Data according to IEC 60747and per semiconductor un less otherwise specified © 2021 IXYS all rights reserved

0.001 0.01 0.1 1 500 600 700 800 900 1000 11 00 2 3 4 5 6 7 8 9 0 11 10 3 10 4 100 120 140 160 0 20 40 60 80 100 100 120 140 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0 50 100 150 200 IF [A] VF [V] IFSM [A] t [s] I2t [A2s] t [ms] Ptot [W] IF(AV)M [A] Tamb [°C] IF(AV)M [A] TC [°C] ZthJC [K/W] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current versus time per diode Fig. 3 I 2t versus time per diode Fig. 4 Power dissipation versusdirect output current and ambient temperature per diode Fig. 5 Max. forward current versus case temperature per diode Fig. 6 Transient thermal impedance junction to case versus time per diode t [ms] Constants for ZthJC calculation: i R thi (K/W) t i (s) 1 0.023 0.0006 2 0.065 0.0038 3 0.094 0.0190 4 0.168 0.1300 0 50 100 150

50 Hz, 80%VRRM

TVJ = 45°C TVJ = 45°C VR = 0 V TVJ = 150°C TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C DC = 0.5 0.4 0.33 0.17 0.08 DC = 0.5 0.4 0.33 0.17 0.08 RthHA [K/W] 0.4 0.6 0.8 1.0 2.0 4.0 Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20211026b Data according to IEC 60747and per semiconductor un less otherwise specified © 2021 IXYS all rights reserved