DMA50I1600HA IXYS | Alldatasheet

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Backside: cathode FAV FV V 1.26 RRM 1600 V = V I = A Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very low forward voltage drop
  • Improved thermal behaviour
  • High commutation robustness
  • High surge capability
  • Diode for main rectification
  • For single and three phase bridge configurations TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20170828a Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. IR V I A VF 1.30 R 0.45 K/W R min. VRSM V

40 T = 25°C VJ

T = °C VJ mA 1.5 V = V R T = 25°C VJ I = A F V T = °C C 130 Ptot 330 WT = 25°C C R K/W 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.61 T = 25°C VJ 150 VF0 V0.81 T = °C VJ 175 rF 8.6 mΩ V1.26 T = °C VJ I = A F V 1.66 I = A F 100 I = A F 100 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V1600 max. repetitive reverse blocking voltage T = 25°C VJ CJ 19 junction capacitance V = V; 400 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °C VJ 175 650 700 1.54 1.48 A A A A 555 595 2.12 2.04 1600 FAV 180° sine average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Rectifier 1700 0.25 IXYS reserves the right to change limits, condition s and dimensions. 20170828a Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

Part No. Logo IXYS abcd Assembly Code Zyyww Assembly Line XXXXXXXXX D M A I 1600 HA Part description Diode Standard Rectifier (up to 1800V) Single Diode TO-247AD (2) DMA50I1200HA TO-247AD (2) 1200 Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 1.2 mounting torque 0.8 TVJ °C 175 virtual junction temperature -55 Weight g6 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N120 mounting force with clip 20 IRMS RMS current 70 Aper terminal 150 -55 TO-247 Similar Part Package Voltage class DMA50I800HA TO-247AD (2) 800 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering DMA50I1600HA 522981 Tube 30 DMA50I1600HA Standard Tstg °C 150 storage temperature -55 threshold voltage V0.81 mΩ V0 max R0 max slope resistance * 6 Equivalent Circuits for Simulation T = VJ I V0 R0 Rectifier 175 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20170828a Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

S Ø P Ø P1 D2 1 2 3 L 2x b2 2x b e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.430 BSC 10.92 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 Outlines TO-247 IXYS reserves the right to change limits, condition s and dimensions. 20170828a Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

0.001 0.01 0.1 1 200 250 300 350 400 450 500 550 2 3 4 5 6 7 8 9 0 11 10 2 10 3 10 4 100 0 20 40 60 100 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0 50 100 150 200 IF [A] VF [V] IFSM [A] t [s] I2t [A2s] t [ms] Ptot [W] IF(AV)M [A] Tamb [°C] IF(AV)M [A] TC [°C] ZthJC [K/W] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current versus time per diode Fig. 3 I 2t versus time per diode Fig. 4 Power dissipation versusdirect output current and ambient temperature per diode Fig. 5 Max. forward current versus case temperature per diode Fig. 6 Transient thermal impedance junction to case versus time per diode t [ms] Constants for ZthJC calculation: i R thi (K/W) t i (s) 1 0.033 0.0006 2 0.075 0.0038 3 0.124 0.0170 4 0.218 0.1400 0 50 100 150

50 Hz, 80%VRRM

TVJ = 45°C TVJ = 45°C VR = 0 V TVJ = 150°C TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C DC = 0.5 0.4 0.33 0.17 0.08 DC = 0.5 0.4 0.33 0.17 0.08 RthHA [K/W] 0.6 0.8 1.0 2.0 4.0 8.0 Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20170828a Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved