DMA30E1800HA IXYS | Alldatasheet

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Backside: anode FAV FV V 1.22 RRM 1800 V = V I = A Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very low forward voltage drop
  • Improved thermal behaviour
  • Diode for main rectification
  • For single and three phase bridge configurations TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, conditions and dimensions. 20130123b Data according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. IR V I A V F 1.25 R 0.7 K/W R min. VRSM V

40 T = 25°C VJ

T = °C VJ mA 1.5 V = V R T = 25°C VJ I = A F V T = °C C 140 Ptot 210 WT = 25°C C R K/W 1800 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.50 T = 25°C VJ 150 VF0 V0.83 T = °C VJ 175 rF 12.8 m Ω V1.22 T = °C VJ I = A F V 1.59 I = A F 60 I = A F 60 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V1800 max. repetitive reverse blocking voltage T = 25°C VJ C J 10 junction capacitance V = V; 400 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °C VJ 175 370 400 495 480 A A A A 315 340 685 665 1800 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Rectifier 1900 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20130123b Data according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Part No. Logo IXYS abcd Assembly Code Zyyww Assembly Line XXXXXXXXX D M A E 1800 HA Part description Diode Standard Rectifier (up to 1800V) Single Diode TO-247AD (2) Current Rating [A] Reverse Voltage [V] Package Top °C M D Nm 1.2 mounting torque 0.8 TVJ °C 175 virtual junction temperature -55 Weight g6 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N120 mounting force with clip 20 IRMS RMS current 70 Aper terminal 150 -55 TO-247 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering DMA30E1800HA 455156 Tube 30 DMA30E1800HA Standard Tstg °C 150 storage temperature -55 threshold voltage V0.83 m Ω V 0 max R 0 max slope resistance * 10.2 Equivalent Circuits for Simulation T = VJ I V0 R 0 Rectifier 175 °C * on die level IXYS reserves the right to change limits, conditions and dimensions. 20130123b Data according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

S Ø P Ø P1 D2 1 2 3 L 2x b2 2x b e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.430 BSC 10.92 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 1 3 Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. 20130123b Data according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

0.001 0.01 0.1 1 150 200 250 300 2 3 4 5 6 7 8 9 0 11 10 2 10 3 0.5 1.0 1.5 0 5 10 15 20 25 30 35 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 0 25 50 75 100 125 150 175 200 IF [A] VF [V] IFSM [A] t [s] I2t [A2s] t [ms] Ptot [W] IF(AV)M T] A [ amb [°C] IF(AV)M [A] TC [°C] ZthJC [K/W] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature Fig. 6 Transient thermal impedance junction to case t [ms] Constants for ZthJC calculation: i R thi (K/W) t i(s) 1 0.03 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 0 25 50 75 100 125 150 175 200 TVJ = 150°C TVJ = 125°C TVJ = 25°C TVJ = 45°C

50 Hz, 80% V RRM

TVJ = 45°C VR = 0 V dc = 0.5 0.4 0.33 0.17 0.08 R thKA =

0.6 K/W

0.8 K/W

1.0 K/W

2.0 K/W

4.0 K/W

8.0 K/W

dc = 0.5 0.4 0.33 0.17 0.08 TVJ = 150°C TVJ = 150°C Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130123b Data according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved