DMA200XA1600NA IXYS | Alldatasheet

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Backside: isolated FAV FV V 1.21 RRM 100 1600 V = V I = A2x Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very low forward voltage drop
  • Improved thermal behaviour
  • Diode for main rectification
  • For single and three phase bridge configurations SOT-227B (minibloc)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling
  • Isolation Voltage: V~ 3000 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact the sales office, whi ch is responsible for you. Should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20160713a Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. IR V I A VF 1.24 R 0.3 K/W R min. 100 VRSM V

200 T = 25°C VJ

T = °C VJ mA 2V = V R T = 25°C VJ I = A F V T = °C C 100 Ptot 415 WT = 25°C C R K/W 100 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.55 T = 25°C VJ 150 VF0 V0.80 T = °C VJ 150 rF 4 mΩ V1.21 T = °C VJ I = A F V 100 1.61 I = A F 200 I = A F 200 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V1600 max. repetitive reverse blocking voltage T = 25°C VJ CJ 53 junction capacitance V = V; 400 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °C VJ 150 1.50 1.62 8.13 7.87 kA kA kA kA 1.28 1.38 11.3 10.9 1600 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Rectifier 1700 0.10 IXYS reserves the right to change limits, condition s and dimensions. 20160713a Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

Part No. DateCode Assembly Code Assembly Line D M A 200 XA 1600 NA Part description Diode Standard Rectifier (up to 1800V) Anti-parallel legs SOT-227B (minibloc) DAA200X1800NA SOT-227B (minibloc) 1800 Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 1.5 mounting torque 1.1 TVJ °C 150 virtual junction temperature -40 Weight g30 Symbol Definition typ. max. min. Conditions operation temperature Unit MT Nm 1.5 terminal torque 1.1 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d Spp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 150 Aper terminal 125 -40 terminal to terminal DAA200XA1800NA SOT-227B (minibloc) 1800 SOT-227B (minibloc) Similar Part Package Voltage class DMA200X1600NA SOT-227B (minibloc) 1600 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL DMA200XA1600NA 519275 Tube 10 DMA200XA1600NA Standard

3000 ISOL

Tstg °C 150 storage temperature -40 2500 threshold voltage V0.8 mΩ V0 max R0 max slope resistance * 2.2 Equivalent Circuits for Simulation T = VJ I V0 R0 Rectifier 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20160713a Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, condition s and dimensions. 20160713a Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

0,001 0,01 0,1 1 600 800 1000 1200 1400 2 3 4 5 6 7 8 9 0 11 10 3 10 4 10 5 0,4 0,8 1,2 1,6 100 120 140 160 180 200 0 20 40 60 80 100 120 120 150 180 0 25 50 75 100 125 150 175 1 10 100 1000 10000 0,0 0,1 0,2 0,3 0,4 IF [A] 0 25 50 75 100 125 150 120 160 200 240 VF [V] IFSM [A] t [s] I2t [A2s] t [ms] Ptot [W] IF(AV)M [A] T amb [°C] IF(AV)M [A] TC [°C] t [ms] ZthJC [K/W] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I 2t versus time per diode Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current versus case temperature Fig. 6 T ransien t t hermal impeda nce jun ction to case Constants for ZthJC calculation: i R thi (K/W) t i (s) 1 0.025 0.011 2 0.027 0.002 3 0.048 0.027 4 0.080 0.600 5 0.120 0.220 TVJ = 150°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 45°C TVJ = 150°C VR = 0 V TVJ = 125°C 150°C RthHA :

0.2 K/W

0.4 K/W

0.6 K/W

0.8 K/W

1.0 K/W

2.0 K/W

dc = 0.5 0.4 0.33 0.17 0.08 dc = 0.5 0.4 0.33 0.17 0.08 TVJ = 25°C Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20160713a Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved