DMA150E1600NA IXYS | Alldatasheet

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Technical content

Backside: Isolated FAV FVV 1.05 RRM 150 1600 V= V I= A Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very low forward voltage drop
  • Improved thermal behaviour
  • Diode for main rectification
  • For single and three phase bridge configurations SOT-227B (minibloc)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling
  • Isolation Voltage: V~3000 IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. IR V I A VF 1.15 R 0.2 K/W R min. 150 VRSM V 200T = 25°CVJ T = °CVJ mA3.5V = VR T = 25°CVJI = AF V T = °CC 110 Ptot 620 WT = 25°CC R K/W 150 1600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.36 T = 25°CVJ 150 VF0 V0.78T = °CVJ 150 rF 1.8 mΩ V1.05T = °CVJI = AF V 150 1.33 I = AF 300 I = AF 300 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V1600max. repetitive reverse blocking voltage T = 25°CVJ CJ 60junction capacitance V = V400 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°CVJmax. forward surge current T = °CVJ 150 I²t T = 45°Cvalue for fusing T = °C150 V = 0 VR V = 0 VR V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °CVJ 150 3.00 3.24 32.5 31.6 kA kA kA kA 2.55 2.76 45.0 43.7 1600 FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Rectifier 1700 0.10 IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Logo Part No. DateCode Assembly Code Assembly Line D M A 150 E 1600 NA Part number Diode Standard Rectifier (up to 1800V) Single Diode SOT-227B (minibloc) Current Rating [A] Reverse Voltage [V] Package TVJ °C MD Nm1.5mounting torque 1.1 Tstg °C150storage temperature -40 Weight g30 Symbol Definition typ. max.min.Conditions virtual junction temperature Unit MT Nm1.5terminal torque 1.1 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 150 Aper terminal 150-40 terminal to terminal SOT-227B (minibloc) Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 50/60 Hz, RMS; I ≤ 1 mAISOL DMA150E1600NA 508942Tube 10DMA150E1600NAStandard 2500 3000ISOL threshold voltage V0.78 mΩ V0 max R0 max slope resistance * 1 Equivalent Circuits for Simulation T =VJ I V0 R0 Rectifier 150°C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

0.001 0.01 0.1 1 1000 1250 1500 1750 2000 2250 2500 23 4 5 6 7 8 9 0 11 104 105 0.5 1.0 1.5 100 150 200 250 300 0 20 40 60 80 100 120 140 160 120 160 200 1 10 100 1000 10000 0.00 0.04 0.08 0.12 0.16 0.20 0 25 50 75 100 125 150 175 100 150 200 250 300 350IF [A] VF [V] IFSM [A] t[ s ] I2t [A2s] t[ m s ] Ptot [W] IF(AV)M T] A [ amb [°C] IF(AV)M [A] [°C] ZthJC [K/W] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I 2t versus time per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature Fig. 6 Transient thermal impedance junction to case t[ m s ] Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.017 0.01 2 0.013 0.00001 3 0.010 0.01 4 0.04 0.04 5 0 . 1 2 0 . 3 0 25 50 75 100 125 150 175

50 Hz, 80%VRRM

TVJ =4 5 ° C TVJ = 150°C TVJ =4 5 ° C VR = 0 V TVJ =1 5 0 ° C RthHA =

0.2 K/W

0.4 K/W

0.6 K/W

0.8 K/W

1.0 K/W

2.0 K/W

DC = 0.5 0.4 0.33 0.17 0.08 TVJ = 150°C TVJ = 125°C TVJ = 2 5 ° C DC = 0.5 0.4 0.33 0.17 0.08 Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130117aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved