DHH55-36N1F IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Low Loss and Soft Recovery High Performance Fast Recovery Diode Phase leg Sonic Fast Recovery Diode 1 2 5 Part number DHH55-36N1F Backside: Isolated FAV rr t ns 230 RRM 1800 V = V I = A Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) i4-Pac
  • Industry convenient outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3000 The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, conditions and dimensions. 20160916d Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

60 ATVJ = °C

I RM max. reverse recovery current IF = A; 60 T = 100°C VJ -di F = A/µs 800 /dt trr VR = V1200 TVJ = °C 25 T = 100°C VJ V = V Symbol Definition Ratings typ. max. IR V I A V F 2.04 R 0.6 K/W R min. VRSM V

200 T = 25°C VJ

T = °C VJ mA 2V = V R T = 25°C VJ I = A F V T = °C C 50 Ptot 210 WT = 25°C C R K/W 1800 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 2.57 T = 25°C VJ 125 VF0 V1.28 T = °C VJ 150 rF 12 m Ω V2.03 T = °C VJ I = A F V 2.73 I = A F 120 I = A F 120 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V1800 max. repetitive reverse blocking voltage T = 25°C VJ C J 28 junction capacitance V = V 1200 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 150 700 A 1800 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Fast Diode 1800 0.20 IXYS reserves the right to change limits, conditions and dimensions. 20160916d Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

Part No. Logo UL listed IXYS Assembly Code Assembly Line ISOPLUS® XXXXXXXXX abcd Zyyww Package Top °C TVJ °C 150 virtual junction temperature -55 Weight g9 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N120 mounting force with clip 20 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 5.5 5.1 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside IRMS RMS current 70 Aper terminal 125 -55 terminal to terminal i4-Pac Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL DHH55-36N1F 500173 Tube 25 DHH55-36N1F Standard

3000 ISOL

Tstg °C 150 storage temperature -55 2500 threshold voltage V1.28 m Ω V 0 max R 0 max slope resistance * 9.5 Equivalent Circuits for Simulation T = VJ I V0 R 0 Fast Diode 150 °C * on die level IXYS reserves the right to change limits, conditions and dimensions. 20160916d Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

E W A c 2x b2 3x b L D R Q 1 5 3 Die kon vexe Form des Subs trates i st t yp.< 0.05 mm übe r der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side min max min max A 4.83 5.21 0.190 0.205 A1 2.59 3.00 0.102 0.118 A2 1.17 2.16 0.046 0.085 b 1.14 1.40 0.045 0.055 b2 1.47 1.73 0.058 0.068 b4 2.54 2.79 0.100 0.110 c 0.51 0.74 0.020 0.029 D 20.80 21.34 0.819 0.840 D1 14.99 15.75 0.590 0.620 D2 1.65 2.03 0.065 0.080 D3 20.30 20.70 0.799 0.815 E 19.56 20.29 0.770 0.799 E1 16.76 17.53 0.660 0.690 e 7.62 BSC 0.300 BSC L 19.81 21.34 0.780 0.840 L1 2.11 2.59 0.083 0.102 Q 5.33 6.20 0.210 0.244 R 2.54 4.57 0.100 0.180 W - 0.10 - 0.004 Di m. Millimeter Inches 1 2 5 Outlines i4-Pac IXYS reserves the right to change limits, conditions and dimensions. 20160916d Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

10 -3 10 -2 10-1 10 0 10 1 10-2 10-1 100 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 120 150 0.0 0.5 1.0 1.5 2.0 2.5 0 400 800 1200 1600 100 100 1000 0 1 2 3 100 120 140 VFR tfr IRM Q r IF [A] VF [V] Q r [nC] -diF /dt[A/µs] IRM [A] -diF /dt [A/µs] K f TVJ [°C] trr [ns] -diF /dt [A/µs] diF /dt[A/µs] VFR [V] t [s] ZthJC [K/W] Fig. 1 Typ. rward current IF versus VF Fig. 2 Typ. reverse recovery charge Q r versus -di F /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 4 Dynamic parameters Q r, IRM versus TVJ Fig. 5 Typ. recovery time trr versus -di F /dt Fig. 6 Typ. peak forward voltage VFR & typ. forward recovery time tfrversus diF /dt Fig. 7 Transient thermal resistance junction to case tfr [µs] Constants for ZthJC calculation: i R thi (K/W) t i(s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 TVJ = 100°C VR = 1200 V IF = 60 A TVJ = 100°C VR = 1200 V IF = 60 A TVJ = 100°C VR = 1200 V IF = 60 A TVJ = 100°C VR = 1200 V TVJ = 125°C TVJ = 25°C Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20160916d Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved