DHG60U1200LB IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Fast Recovery Diode 3~ Rectifier Bridge Sonic Fast Recovery Diode 1/2/3 7 4/5/6 8 9 Part number DHG60U1200LB Backside: isolated DAV rr t ns 160 RRM 1200 V = V I = A Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) SMPD
  • Industry convenient outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3000 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact the sales office, whi ch is responsible for you. Should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20131211b Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

19 ATVJ = °C

I RM max. reverse recovery current IF = A; 20 T = 125°C VJ -d F = A/µs 600 /dt trr V = V 600 TVJ = °C 25 T = 125°C VJ V = V Symbol Definition Ratings typ. max. IR V I A VF 1.99 R 1.2 K/W R min. VRSM V

50 T = 25°C VJ

T = °C VJ mA 0.5 V = V R T = 25°C VJ I = A F V T = °C C 80 Ptot 100 WT = 25°C C R K/W 1200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.93 T = 25°C VJ 125 VF0 V1.35 T = °C VJ 150 rF 29 mΩ V2.30 T = °C VJ I = A F V 3.21 I = A F 60 I = A F 60 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V1200 max. repetitive reverse blocking voltage T = 25°C VJ CJ 11 junction capacitance V = V 600 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 150 200 A 1200 DAV d = rectangular ⅓ bridge output current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Fast Diode 1200 0.40 IXYS reserves the right to change limits, condition s and dimensions. 20131211b Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

1 to 19: Part # 20 to 23: Date Code 24 to 25: Assembly line 26 to 31: Lot # 32: Split Lot 33 to 36: Individual # ~ ~ ~ Assembly line D H G U 1200 LB Part description Diode Sonic Fast Recovery Diode extreme fast 3~ Rectifier Bridge SMPD-B Current Rating [A] Reverse Voltage [V] Package Top °C TVJ °C 150 virtual junction temperature -55 Weight g8.5 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N130 mounting force with clip 40 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 1.6 4.0 dSpp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 100 Aper terminal 125 -55 terminal to terminal SMPD DHG60U1200LB-TRR Tape & Reel 200 513414 DHG60U1200LB Delivery Mode Quantity Code No. Ordering Number Marking on Product Alternative Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL DHG60U1200LB 513421 Blister 45 DHG60U1200LB Standard

3000 ISOL

Tstg °C 150 storage temperature -55 2500 threshold voltage V1.35 mΩ V0 max R0 max slope resistance * 27 Equivalent Circuits for Simulation T = VJ I V0 R0 Fast Diode 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20131211b Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

32,7 0,5 2\0,05(3x) 18\0,1 2,75\0,1 5,5\0,1 13,5\0,1 16,25\0,1 19\0,1 25\0,2 0,5\0,1 9\0,1 0,2 1\0,05(6x) 5,5 0,12) A 0,55\0,1 4\`0,05 4,85 0,2 0,2 c 0,05 A ( 8 : 1 ) 0 0,15+ c 0,1 seating plane Pin number Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating 1/2/3 7 4/5/6 8 9 Outlines SMPD IXYS reserves the right to change limits, condition s and dimensions. 20131211b Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

300 400 500 600 700 800 900 1000 1100 Qrr [μC] IF [A] VF i d] V [ F /dt [A/μs] TVJ = 125°C VR = 600 V 15 A 30 A 60 A 300 400 500 600 700 800 900 1000 1100 IRR [A] diF /dt [A/μs] TVJ = 125°C VR = 600 V 15 A 30 A 60 A Fig. 9 Typ. peak reverse current I RM vs. di/dt 300 400 500 600 700 800 900 1000 1100 100 200 300 400 500 600 700 trr [ns] diF /dt [A/μs] 15 A 30 A 60 A TVJ = 125°C VR = 600 V Fig. 10 Typ. recovery time t rr versus di/dt Fig.11 Typ. recovery energy E rec versus di/dt 300 400 500 600 700 800 900 1000 1100 0.0 0.4 0.8 1.2 1.6 2.0 Erec [mJ] diF /dt [A/μs] TVJ = 125°C VR = 600 V 15 A 30 A 60 A 0.001 0.01 0.1 1 10 0.0 0.4 0.8 1.2 1.6 tp [s] ZthJC [K/W] Fig. 12 Typ. transient thermal impedance TVJ = 125°C TVJ = 25°C Fast Diode IXYS reserves the right to change limits, condition s and dimensions. 20131211b Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved