DHG40C600PB IXYS | Alldatasheet

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Technical content

Features / Advantages: typ. max. IFSM IR A V 150 I A VF 2.25 R 0.90 K/W VR = 1 2 3 min. t = 10 ms Applications: VRRM V600 25TVJV° C= TVJ °C=m A1.5 Package: Part number VR = TVJ =° CIF =A V TC = 95°Cd = Ptot 140 WTC °C= TVJ 150 °C-55 V I RRM = 600 TVJ = 45°C DHG 40 C 600 PB V A 600 V600 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 3.17 TVJ °C=2 5 CJ junction capacitance V = V; T 125 VF0 V1.12TVJ = 150°C rF 49 f = 1 MHz = °C25 mΩ V2.20TVJ =° CIF =A V 3.23 IF =A 40 IF =A 40 threshold voltage slope resistance for power loss calculation only Backside: cathode 8ATVJ =° C reverse recovery time A12 ns (50 Hz), sine t rr = 40 ns

  • Housing: High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode TO-220
  • rIndustry standard outline
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ IRM max. reverse recovery current IF =A ;20 T= 125°CVJ -diF =A / µ s450/dtt rr VR =V 300 TVJ =° C25 T= 125°CVJ µA 13400 pF thermal resistance junction to casethJC rectangular 0.5
  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions. 20110715aData according to IEC 60747and per diode unless otherwise specified

2011 IXYS all rights reserved

R thCH K/W0.50 MD Nm0.6mounting torque 0.4 Tstg °C150storage temperature -55 Weight g2 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit FC N60mounting force with clip 20 Ordering Delivery Mode Quantity Code No. Standard Ordering Number DHG 40 C 600 PB 504948Tube 50 XXXXXX YYWW ZLogo Marking on product DateCode Assembly Code abcdef Product Marking Assembly Line D H G C 600 PB Part number Diode Sonic Fast Recovery Diode extreme fast Common Cathode TO-220AB (3) DHG40C600HB TO-247AD (3) Similar Part Package Marking on Product DHG40C600PB 600 Voltage Class Current Rating [A] Reverse Voltage [V] 1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . In case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increasedby connecting the backside. IXYS reserves the right to change limits, conditions and dimensions. 20110715aData according to IEC 60747and per diode unless otherwise specified

Dim. Millimeter Inches Min. Max. Min. Max. A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 E 9.91 10.66 0.390 0.420 e 2.54 BSC 0.100 BSC H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 Q 2.54 3.18 0.100 0.125 3x b2 E ØP Q D L 3x b 2x e C A2 H1 A Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. 20110715aData according to IEC 60747and per diode unless otherwise specified

0.2 0.3 0.4 0.5 0.6 0.7 0.8 Qrr [µC] IF [A] VF [V] diF /dt [A/µs] TVJ = 125°C TVJ =2 5 ° C 10 A 20 A 40 A 200 300 400 500 600 700 800 900 IRM [A] diF /dt [A/µs] 10 A 20 A 40 A Fig. 3 Typ. peak reverse current I RM vs. di/dt 200 300 400 500 600 700 800 900 100 120 140 160 trr [ns] diF /dt [A/µs] 10 A 40 A Fig. 4 Typ. recovery time t rr versus di/dt Fig. 5 Typ. transient thermal impedance 0.001 0.01 0.1 1 10 0.1 ZthJC [K/W] tP [s] TVJ = 125°C VR =3 0 0 V 20 A TVJ = 125°C VR =3 0 0 V TVJ = 125°C VR = 300 V Ri ti 1 0.231 0.0005 2 0.212 0.004 3 0.19 0.02 4 0.267 0.15 IXYS reserves the right to change limits, conditions and dimensions. 20110715aData according to IEC 60747and per diode unless otherwise specified