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Low Loss and Soft Recovery High Performance Fast Recovery Diode Common Cathode Sonic Fast Recovery Diode 1 2 3 Part number DHG40C600HB Backside: cathode FAV rr t ns 40 RRM 600 V = V I = A2x Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) TO-247
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

8 ATVJ = °C

I RM max. reverse recovery current IF = A; 20 T = 125°C VJ -di F = A/µs 450 /dt trr VR = V300 TVJ = °C 25 T = 125°C VJ V = V Symbol Definition Ratings typ. max. IR V I A VF 2.24 R 0.9 K/W R min. VRSM V

25 T = 25°C VJ

T = °C VJ mA 1.5 V = V R T = 25°C VJ I = A F V T = °C C 95 Ptot 140 WT = 25°C C R K/W 600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 3.15 T = 25°C VJ 125 VF0 V1.12 T = °C VJ 150 rF 49 mΩ V2.19 T = °C VJ I = A F V 3.21 I = A F 40 I = A F 40 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V600 max. repetitive reverse blocking voltage T = 25°C VJ CJ 12 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 150 150 A 600 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Fast Diode 600 0.25 IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

Part No. Logo IXYS abcd Assembly Code Zyyww Assembly Line XXXXXXXXX D H G C 600 HB Part description Diode Sonic Fast Recovery Diode extreme fast Common Cathode TO-247AD (3) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 1.2 mounting torque 0.8 TVJ °C 150 virtual junction temperature -55 Weight g6 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N120 mounting force with clip 20 IRMS RMS current 70 Aper terminal 125 -55 TO-247 Similar Part Package Voltage class DHG40C600PB TO-220AB (3) 600 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering DHG40C600HB 505145 Tube 30 DHG40C600HB Standard Tstg °C 150 storage temperature -55 threshold voltage V1.12 mΩ V0 max R0 max slope resistance * 46 Equivalent Circuits for Simulation T = VJ I V0 R0 Fast Diode 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

S Ø P Ø P1 D2 1 2 3 L 2x b2 3x b 2x e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.215 BSC 5.46 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 1 2 3 Outlines TO-247 IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

0.2 0.3 0.4 0.5 0.6 0.7 0.8 Qrr [μC] IF [A] VF i d] V [ F /dt [A/μs] TVJ = 125°C TVJ = 25°C 10 A 20 A 40 A Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov. charge Qrr versus di/dt 200 400 600 800 IRM [A] diF /dt [A/μs] 10 A 20 A 40 A Fig. 3 Typ. peak reverse current IRM versus di/dt 200 400 600 800 100 120 140 160 trr [ns] diF /dt [A/μs] 10 A 40 A Fig. 5 Typ. recovery time trr versus di/dt Fig. 7 Typ. transient thermal impedance junction to case 0.001 0.01 0.1 1 10 0.1 ZthJC [K/W] tP [s] TVJ = 125°C VR = 300 V 20 A TVJ = 125°C VR = 300 V R i t i 1 0.231 0.0005 2 0.212 0.004 3 0.19 0.02 4 0.267 0.15 TVJ = 125°C VR = 300 V Fig. 4 Dynamic parameters Qrr, IRM versus TVJ Fig. 6 Typ. recovery energy Erec versus di/dt Fast Diode IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved