DHG40C1200HB IXYS | Alldatasheet

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Technical content

Features / Advantages: typ. max. IFSM IR A V 150 I A VF 2.24 R 0.90 K/W VR = 2 1 3 min. t = 10 ms Applications: VRRM V1200 25TVJV° C = TVJ °C=m A 0.4 Package: Part number VR = TVJ =° CIF =A V TC = 95°Cd = Ptot 140 WTC °C= TVJ 150 °C-55 V I RRM = 1200 TVJ = 45°C DHG 40 C 1200 HB V A 1200 V1200 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 2.89 TVJ °C=2 5 CJ junction capacitance V = V; T 125 VF0 V1.29TVJ = 150°C rF 43 f = 1 MHz = °C 25 mΩ V2.24TVJ =° CIF =A V 3.15 IF =A 40 IF =A 40 threshold voltage slope resistance for power loss calculation only Backside: cathode

15 ATVJ =° C

(50 Hz), sine t rr = 200 ns

  • Housing: High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode TO-247
  • rIndustry standard outline
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ IRM max. reverse recovery current IF =A ;20 T= 125°CVJ -diF =A / µ s400/dtt rr VR =V 600 TVJ =° C25 T= 125°CVJ µA 8600 pF thermal resistance junction to casethJC rectangular 0.5
  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions. 20110808aData according to IEC 60747and per diode unless otherwise specified

2011 IXYS all rights reserved

R thCH K/W0.25 MD Nm1.2mounting torque 0.8 Tstg °C150storage temperature -55 Weight g6 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit FC N120mounting force with clip 20 Ordering Delivery Mode Quantity Code No. Standard Ordering Number DHG 40 C 1200 HB 505138Tube 30 000000 YYWWZ Logo Marking on product DateCode Assembly Code abcdef Product Marking Assembly Line D H G C 1200 HB Part number Diode Sonic Fast Recovery Diode extreme fast Common Cathode TO-247AD (3) Marking on Product DHG40C1200HB Current Rating [A] Reverse Voltage [V] 1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . In case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increasedby connecting the backside. IXYS reserves the right to change limits, conditions and dimensions. 20110808aData according to IEC 60747and per diode unless otherwise specified

S Ø P Ø P1 D2 123 L 2x b2 3x b 2x e 2x E2 D E Q A A2 C Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 e 0.215 BSC 5.46 BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 Ø P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - Ø P1 - 0.29 - 7.39 Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. 20110808aData according to IEC 60747and per diode unless otherwise specified

[µC] IF [A] VF [V] diF /dt [A/µs] TVJ =1 2 5 ° C TVJ = 2 5 ° C TVJ =1 2 5 ° C VR = 600 V 10 A 20 A 40 A 200 300 400 500 600 700 IRM [A] diF /dt [A/µs] TVJ = 125°C VR =6 0 0V 10 A 20 A 40 A Fig. 3 Typ. peak reverse current IRM vs. di/dt 200 300 400 500 600 700 100 200 300 400 500 600 700 trr [ns] diF /dt [A/µs] 10 A 20 A 40 A TVJ = 125°C VR =6 0 0 V Fig. 4 Typ. recovery time t rr versus di/dt Fig. 5 Typ. recovery energy E rec versus di/dt 200 300 400 500 600 700 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Erec [mJ] diF /dt [A/µs] TVJ =1 2 5 ° C VR = 600 V 10 A 20 A 40 A 0.001 0.01 0.1 1 10 0.1 tp [s] ZthJC [K/W] Fig. 6 Typ. transient thermal impedance Ri ti 1 0.231 0.0005 2 0.212 0.004 3 0.19 0.02 4 0.267 0.15 IXYS reserves the right to change limits, conditions and dimensions. 20110808aData according to IEC 60747and per diode unless otherwise specified