DHG20I600HA IXYS | Alldatasheet

Document overview

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Technical content

Features / Advantages:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch typ. max. IFSM IR A µA V 150 IFAV A VF 2.31 RthJC 0.90 K/W VR = min. ms (50 Hz), sine Applications:
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) VRRM V600 30TVJV °C= TVJ °C= mA3 Package: Part number VR = TVJ = °CIF =A V TC =8 5 ° C Ptot 140 WTC °C= AIRM 8 /dt IF =A ; VR =V A t rr EAS tbd mJTVJ °C=IAS =A ; L = µ H IAR AVA = tbdf = 10 kHz1.5·VR typ.; TVJ 150 °C-55 High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode V I t RRM FAV rr 600 TVJ =4 5 ° C -diF = 400 A/µs 400 tbd 100 DHG 20 I 600HA V A ns 600 V600 tp =1 0 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time Conditions Unit 3.08 TVJ °C= 25 CJ tbd pFjunction capacitance VR =V ;300 TVJ 125 VF0 V1.31TVJ = 150 °C rF 36.9 Ω f = 1 MHz =° C25 m TO-247AD V2.15TVJ =° CIF =A V 20 125 3.00 IF =A 40 IF =A 40 ns35 ns
  • Industry standard outline
  • Epoxy meets UL 94V-0
  • RoHS compliant TVJ °C=2 5 TVJ °C= 125 TVJ °C=2 5 TVJ °C= 125 rectangular, d = 0.5 threshold voltage slope resistance for power loss calculation only Backside: cathode IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 0629 * Data according to IEC 60747and per diode unless otherwise specified

IRMS Aper pin* 70 RthCH K/W0.25 MD Nm1.2mounting torque 0.8 Tstg °C150storage temperature -55 Weight g6 C E F D BA K G H J L N M Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-247AD F C N120mounting force with clip 20 IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 0629 * Data according to IEC 60747and per diode unless otherwise specified