DHG20I1200PA IXYS | Alldatasheet

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Technical content

Features / Advantages: typ. max. IFSM IR A V 150 I A VF 2.24 R 0.90 K/W VR = min. t = 10 ms Applications: VRRM V1200 30TVJV° C = TVJ °C=m A 0.4 Package: Part number VR = TVJ =° CIF =A V TC = 95°Cd = Ptot 140 WTC °C= TVJ 150 °C-55 V I RRM = 1200 TVJ = 45°C DHG 20 I 1200 PA V A 1200 V1200 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 2.90 TVJ °C=2 5 CJ junction capacitance V = V; T 125 VF0 V1.25TVJ = 150°C rF 45 f = 1 MHz = °C 25 mΩ V2.25TVJ =° CIF =A V 3.17 IF =A 40 IF =A 40 threshold voltage slope resistance for power loss calculation only Backside: cathode

15 ATVJ =° C

(50 Hz), sine t rr = 200 ns

  • Housing: High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode TO-220
  • rIndustry standard outline
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ IRM max. reverse recovery current IF =A ;20 T= 125°CVJ -diF =A / µ s400/dtt rr VR =V 600 TVJ =° C25 T= 125°CVJ µA 8600 pF thermal resistance junction to casethJC rectangular 0.5
  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions. 20110616aData according to IEC 60747and per diode unless otherwise specified

2011 IXYS all rights reserved

R thCH K/W0.50 MD Nm0.6mounting torque 0.4 Tstg °C150storage temperature -55 Weight g2 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit FC N60mounting force with clip 20 Ordering Delivery Mode Quantity Code No. Standard Ordering Number DHG 20 I 1200 PA 504934Tube 50 XXXXXX YYWW ZLogo Marking on product DateCode Assembly Code abcdef Product Marking Assembly Line D H G I 1200 PA Part number Diode Sonic Fast Recovery Diode extreme fast Single Diode TO-220AC (2) DHG20I1200HA TO-247AD (2) Similar Part Package Marking on Product DHG20I1200PA 1200 Voltage Class Current Rating [A] Reverse Voltage [V] IXYS reserves the right to change limits, conditions and dimensions. 20110616aData according to IEC 60747and per diode unless otherwise specified

Dim. Millimeter Inches Min. Max. Min. Max. A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 E 9.91 10.66 0.390 0.420 e 5.08 BSC 0.200 BSC H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 Q 2.54 3.18 0.100 0.125 2x b2 E ØP Q D L 2x b e C A2 H1 A Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. 20110616aData according to IEC 60747and per diode unless otherwise specified

[µC] IF [A] VF [V] diF /dt [A/µs] TVJ =1 2 5 ° C TVJ = 2 5 ° C TVJ =1 2 5 ° C VR = 600 V 10 A 20 A 40 A 200 300 400 500 600 700 IRM [A] diF /dt [A/µs] TVJ = 125°C VR =6 0 0V 10 A 20 A 40 A Fig. 3 Typ. peak reverse current IRM vs. di/dt 200 300 400 500 600 700 100 200 300 400 500 600 700 trr [ns] diF /dt [A/µs] 10 A 20 A 40 A TVJ = 125°C VR =6 0 0 V Fig. 4 Typ. recovery time t rr versus di/dt Fig. 5 Typ. recovery energy E rec versus di/dt 200 300 400 500 600 700 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Erec [mJ] diF /dt [A/µs] TVJ =1 2 5 ° C VR = 600 V 10 A 20 A 40 A 0.001 0.01 0.1 1 10 0.1 tp [s] ZthJC [K/W] Fig. 6 Typ. transient thermal impedance Ri ti 1 0.231 0.0005 2 0.212 0.004 3 0.19 0.02 4 0.267 0.15 IXYS reserves the right to change limits, conditions and dimensions. 20110616aData according to IEC 60747and per diode unless otherwise specified