DHG20C600QB IXYS | Alldatasheet

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Technical content

Features / Advantages:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch typ. max. IFSM IR A µA V 100 IFAV A VF 2.35 RthJC 1.80 K/W VR = 12 3 min. ms (50 Hz), sine Applications:
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) VRRM V600 15TVJV °C= TVJ °C= mA1.5 Package: Part number VR = TVJ = °CIF =A V TC =1 0 0 ° C Ptot 70 WTC °C= AIRM 4 /dt IF =A ; VR =V A t rr EAS tbd mJTVJ °C=IAS =A ; L = µ H IAR AVA = tbdf = 10 kHz1.5·VR typ.; TVJ 150 °C-55 High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode V I t RRM FAV rr 600 TVJ =4 5 ° C -diF = 200 A/µs 400 100 DHG 20 C 600QB V A ns 600 V600 tp =1 0 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time Conditions Unit (Marking on product) TVJ °C= 25 CJ pFjunction capacitance VR =V ;300 TVJ 125 VF0 V1.20TVJ =1 5 0 ° C rF 93 Ω f = 1 MHz =° C25 m TO-3P V2.20TVJ =° CIF =A V 10 125 IF =A 20 IF =A 20 ns35 ns
  • Industry standard outline - compatible with TO-247
  • Epoxy meets UL 94V-0
  • RoHS compliant TVJ °C=2 5 TVJ °C=1 2 5 TVJ °C=2 5 TVJ °C=1 2 5 rectangular, d = 0.5 threshold voltage slope resistance for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 0614 * Data according to IEC 60747and per diode unless otherwise specified

IRMS Aper pin* RthCH K/W0.25 MD Nm1.2mounting torque 0.8 T stg °C150storage temperature -55 Weight g5 MAX ØP S ØP1 L e E c D b A MINSYM MIN MAX Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-3P F C N120mounting force with clip 20 IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 0614 * Data according to IEC 60747and per diode unless otherwise specified