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Low Loss and Soft Recovery High Performance Fast Recovery Diode Single Diode Sonic Fast Recovery Diode Part number DHG10I600PM Backside: isolated FAV rr t ns RRM 600 V = V I = A Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) TO-220FP
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Base plate: Plastic overmolded tab
  • Reduced weight
  • Isolation Voltage: V~ 2500 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

4 ATVJ = °C

IRM max. reverse recovery current IF = A; 10 T = °C VJ -di F = A/µs 200 /dt trr VR = V200 TVJ = °C 25 T = °C VJ V = V Symbol Definition Ratings typ. max. IR V I A VF 2.23 R 4 K/W R min. VRSM V

30 T = 25°C VJ

T = °C VJ mA 1.2 V = V R T = 25°C VJ I = A F V T = °C C 25 Ptot 30 WT = 25°C C R K/W 600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 3.13 T = 25°C VJ 125 VF0 V1.04 T = °C VJ 150 rF 104 mΩ V2.18 T = °C VJ I = A F V 3.29 I = A F 20 I = A F 20 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V600 max. repetitive reverse blocking voltage T = 25°C VJ CJ 6junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 150 80 A 600 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Fast Diode 600 0.50 IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

D H G I 600 PM Part description Diode Sonic Fast Recovery Diode extreme fast Single Diode TO-220ACFP (2) Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 0.6 mounting torque 0.4 TVJ °C 150 virtual junction temperature -55 Weight g2 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N60 mounting force with clip 20 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 3.2 2.7 2.5 2.5 dSpp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 35 Aper terminal 125 -55 terminal to terminal TO-220FP Similar Part Package Voltage class DHG10I600PA TO-220AC (2) 600 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL DHG10I600PM 503679 Tube 50 DHG10I600PM Standard

2500 ISOL

Tstg °C 150 storage temperature -55 2100 threshold voltage V1.04 mΩ V0 max R0 max slope resistance * 101 Equivalent Circuits for Simulation T = VJ I V0 R0 Fast Diode 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved

Note: All metal surface are matte pure tin plated except trimmed area. Ø P A H Q D E L bb1 c e 1 3 min max min max A 4.50 4.90 0.177 0.193 A1 2.34 2.74 0.092 0.108 A2 2.56 2.96 0.101 0.117 b 0.70 0.90 0.028 0.035 b1 1.27 1.47 0.050 0.058 c 0.45 0.60 0.018 0.024 D 15.67 16.07 0.617 0.633 d1 0 1.10 0 0.043 E 9.96 10.36 0.392 0.408 e H 6.48 6.88 0.255 0.271 L 12.68 13.28 0.499 0.523 L1 3.03 3.43 0.119 0.135 Ø P 3.08 3.28 0.121 0.129 Q 3.20 3.40 0.126 0.134 Dim. Millimeters Inches 2.54 BSC 0.100 BSC Outlines TO-220FP IXYS reserves the right to change limits, condition s and dimensions. 20131126a Data according to IEC 60747and per semiconductor un less otherwise specified © 2013 IXYS all rights reserved