DHG10I1800PA IXYS | Alldatasheet

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Low Loss and Soft Recovery High Performance Fast Recovery Diode Single Diode Sonic Fast Recovery Diode Part number DHG10I1800PA Backside: cathode FAV rr t ns 300 RRM 1800 V = V I = A Features / Advantages: Applications: Package:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) TO-220
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, conditions and dimensions. 20161007b Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

13 ATVJ = °C

I RM max. reverse recovery current IF = A; 10 T = 125°C VJ -di F = A/µs 250 /dt trr VR = V900 TVJ = °C 25 T = 125°C VJ V = V Symbol Definition Ratings typ. max. IR V I A V F 2.23 R 1.5 K/W R min. VRSM V

50 T = 25°C VJ

T = °C VJ mA 0.1 V = V R T = 25°C VJ I = A F V T = °C C 100 Ptot 85 WT = 25°C C R K/W 1800 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 2.90 T = 25°C VJ 125 VF0 V1.30 T = °C VJ 150 rF 95 m Ω V2.33 T = °C VJ I = A F V 3.25 I = A F 20 I = A F 20 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V1800 max. repetitive reverse blocking voltage T = 25°C VJ C J 3junction capacitance V = V 900 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°C VJ max. forward surge current V = 0 V R T = °C VJ 150 60 A 1800 FAV d = rectangular 0.5 average forward current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Fast Diode 1800 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20161007b Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

Lot # abcdef Product Marking Assembly Line D H G I 1800 PA Part description Diode Sonic Fast Recovery Diode extreme fast Single Diode TO-220AC (2) Current Rating [A] Reverse Voltage [V] Package Top °C M D Nm 0.6 mounting torque 0.4 TVJ °C 150 virtual junction temperature -55 Weight g2 Symbol Definition typ. max. min. Conditions operation temperature Unit FC N60 mounting force with clip 20 IRMS RMS current 35 Aper terminal 125 -55 TO-220 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering DHG10I1800PA 508242 Tube 50 DHG10I1800PA Standard Tstg °C 150 storage temperature -55 threshold voltage V1.3 m Ω V 0 max R 0 max slope resistance * 92 Equivalent Circuits for Simulation T = VJ I V0 R 0 Fast Diode 150 °C * on die level IXYS reserves the right to change limits, conditions and dimensions. 20161007b Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

Dim. Millimeter Inches Min. Max. Min. Max. A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 E 9.91 10.66 0.390 0.420 e 5.08 BSC 0.200 BSC H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 Q 2.54 3.18 0.100 0.125 2x b2 E ØP Q D L 2x b e C A2 H1 A 1 3 = supplier option Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. 20161007b Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved

1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 Qrr [μC] IF [A] VF [V] diF /dt [A/μs] TVJ = 125°C TVJ = 25°C 5 A 10 A 20 A 200 300 400 500 600 700 IRM [A] diF /dt [A/μs] 5 A 10 A 20 A 200 300 400 500 600 700 200 300 400 500 600 700 trr [ns] diF /dt [A/μs] 10 A 5 A 20 A 200 300 400 500 600 700 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Erec [mJ] diF /dt [A/μs] 10 A 5 A 20 A TVJ = 125°C VR = 900 V TVJ = 125°C VR = 900 V TVJ = 125°C VR = 900 V TVJ = 125°C VR = 900 V 0.001 0.01 0.1 1 10 0.1 R i i 0.385 0.0005 0.355 0.004 0.315 0.02 0.445 0.15 ZthJC [K/W] tP [s] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov. charge Q rrversus di/dt Fig. 3 Typ. peak reverse current IRM versus di/dt Fig. 5 Typ. recovery time trrversus di/dt Fig. 7 Typ. transient thermal impedance junction to case Fig. 4 Dynamic parameters Q rr, IRM versus TVJ Fig. 6 Typ. recovery energy Erecversus di/dt Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20161007b Data according to IEC 60747and per semiconductor unless otherwise specified © 2016 IXYS all rights reserved