DHG10I1200PM IXYS | Alldatasheet
Document overview
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Technical content
Features / Advantages:
- Planar passivated chips
- Very low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch typ. max. IFSM IR A µA V IFAV A VF 2.69 RthJC 4.00 K/W VR = min. ms (50 Hz), sine Applications:
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS) VRRM V1200 15TVJV °C= TVJ °C= mA1.5 Package: Part number VR = TVJ = °CIF =A V TC =3 0 ° C Ptot 31 WTC °C= AIRM 8.5 /dt IF =A ; VR =V A t rr EAS tbd mJTVJ °C=IAS =A ; L = µ H IAR AVA = tbdf = 10 kHz1.5·VR typ.; TVJ 150 °C-55 High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode V I t RRM FAV rr 1200 TVJ =4 5 ° C -diF = 350 A/µs 800 tbd 100 DHG 10 I 1200PM V A ns 1200 V1200 tp =1 0 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time Conditions Unit 3.56 TVJ °C= 25 CJ tbd pFjunction capacitance VR =V ;600 TVJ 125 VF0 V1.60TVJ = 150 °C rF 73.6 Ω f = 1 MHz =° C25 m TO-220FPAC V2.38TVJ =° CIF =A V 10 125 3.33 IF =A 20 IF =A 20 ns75 ns
- Industry standard outline
- Plastic overmolded tab for electrical isolation
- Epoxy meets UL 94V-0
- RoHS compliant TVJ °C=2 5 TVJ °C= 125 TVJ °C=2 5 TVJ °C= 125 rectangular, d = 0.5 threshold voltage slope resistance for power loss calculation only Backside: isolated IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 0629 * Data according to IEC 60747and per diode unless otherwise specified
IRMS Aper pin* 35 RthCH K/W0.50 MD Nm0.6mounting torque 0.4 Tstg °C150storage temperature -55 Weight g2 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220FPAC F C N60mounting force with clip 20 IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved 0629 * Data according to IEC 60747and per diode unless otherwise specified