DHG100X1200NA IXYS | Alldatasheet

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Technical content

Features / Advantages: typ. max. IFSM IR A V 500 I A VF 2.16 R 0.60 K/W VR = min. t = 10 ms Applications: VRRM V1200 100TVJV° C = TVJ °C=m A 1.2 Package: Part number VR = TVJ =° CIF =A V TC = 65°Cd = Ptot 200 WTC °C= TVJ 150 °C-40 V I RRM = 1200 TVJ = 45°C DHG 100 X 1200 NA V A 1200 V1200 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 2.78 TVJ °C=2 5 CJ junction capacitance V = V; T 125 VF0 V1.26TVJ = 150°C rF 15.3 f = 1 MHz = °C 25 mΩ V2.13TVJ =° CIF =A V 2.97 IF =A 100 IF =A 100 threshold voltage slope resistance for power loss calculation only Backside: Isolated

45 ATVJ =° C

(50 Hz), sine t rr = 200 ns

  • Housing: High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs SOT-227B (minibloc)
  • rIndustry standard outline
  • rCu base plate internal DCB isolated
  • rIsolation Voltage 3000 V
  • rEpoxy meets UL 94V-0
  • rRoHS compliant R VJ IRM max. reverse recovery current IF =A ;60 T= 125°CVJ -diF =A / µ s1200/dtt rr VR =V 600 TVJ =° C25 T= 125°CVJ µA 27600 pF thermal resistance junction to casethJC rectangular 0.5
  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS) FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions. 20110526bData according to IEC 60747and per diode unless otherwise specified

2011 IXYS all rights reserved

10.5 3.2 8.6 6.8 IRMS Aper terminal 100 R thCH K/W0.10 MD Nm1.5mounting torque 1.1 Tstg °C150storage temperature -40 Weight g30 Symbol Definition Ratings typ. max.min.Conditions RMS current thermal resistance case to heatsink Unit Ordering Delivering Mode Base Qty Code Key Standard Part Name DHG 100 X 1200 NA 507759Tube 10 abcde YYWWZ XXXXXX Product Marking Logo Part No. DateCode Assembly Code Assembly Line D H G 100 X 1200 NA Part number Diode Sonic Fast Recovery Diode extreme fast Parallel legs SOT-227B (minibloc) Marking on Product DHG100X1200NA Current Rating [A] Reverse Voltage [V] MT Nm1.5terminal torque 1.1 VISOL V3000t = 1 second V2500t = 1 minute isolation voltage dSpp/App mm mm creepage | striking distance on surface | through air terminal to terminal dSpb/Apb creepage | striking distance on surface | through air terminal to backside IXYS reserves the right to change limits, conditions and dimensions. 20110526bData according to IEC 60747and per diode unless otherwise specified

Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. 20110526bData according to IEC 60747and per diode unless otherwise specified

600 700 800 900 1000 1100 1200 1300 100 120 Qrr [µC] IF [A] VF [V] diF /dt [A/µs] TVJ = 125°C TVJ = 25°C TVJ = 125°C VR =6 0 0 V 30 A 60 A 120 A 600 700 800 900 1000 1100 1200 1300 IRR [A] diF /dt [A/µs] TVJ = 125°C VR =6 0 0 V 120 A 30 A 60 A Fig. 3 Typ. peak reverse current IRM vs. di/dt 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 trr [ns] diF /dt [A/µs] 120 A 30 A 60 A TVJ =1 2 5 ° C VR = 600 V Fig. 4 Typ. recovery time t rr versus di/dt Fig. 5 Typ. recovery energy E rec versus di/dt 600 700 800 900 1000 1100 1200 1300 0.0 0.8 1.6 2.4 3.2 4.0 Erec [mJ] diF /dt [A/µs] TVJ = 125°C VR = 600 V 120 A 30 A 60 A 0.001 0.01 0.1 1 10 0.01 0.1 tp [s] ZthJC [K/W] Fig. 6 Typ. transient thermal impedance iR i i 1 0.137 0.0025 20 . 1 0 . 0 3 3 0.233 0.03 4 0.130 0.08 IXYS reserves the right to change limits, conditions and dimensions. 20110526bData according to IEC 60747and per diode unless otherwise specified