L680 IXYS | Alldatasheet

Document overview

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Technical content

Features

 Low forward voltage  Very high switching speed  Low junction capacity of GaAs - low reverse current peak at turn off  Soft turn off  Temperature independent switching behaviour  High temperature operation capability  Epoxy meets UL 94V-0

Applications

 MHz switched mode power supplies (SMPs)  Small size SMPs  High frequency converters  Resonant converters Gallium Arsenide Schottky Rectifier IFAV = 5.4 A VRRM = 250 V CJunction = 6.4 pF AC ACA Symbol Conditions Maximum Ratings VRRM/RSM 250 V IFAV TC = 25°C; DC 5.4 A IFAV TC = 90°C; DC 3.9 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 10 A TVJ -55...+175 °C Tstg -55...+150 °C Ptot TC = 25°C1 8 W A = Anode, C = Cathode , TAB = Cathode TO-220 AB A C A C (TAB) CTO-220 AC A C (TAB) AC Single ATO-252 AA A C (TAB) Pulse test: c Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Symbol Conditions Characteristic Values typ. max. IR c TVJ = 25°C V R = VRRM 0.7 mA TVJ = 125°C V R = VRRM 0.7 mA VF IF = 2 A; T VJ = 125°C 1.3 V IF = 2 A; T VJ = 25°C 1.3 1.6 V CJ VR = 100 V; T VJ = 125°C 6.4 pF RthJC 8.5 K/W RthCH TO-220 0.5 K/W Weight TO-252 0.3 g TO-220 2 g

© 2004 IXYS All rights reserved 2 - 2 DGS 4-025A DGS 3-025AS DGSK 8-025A 435IXYS reserves the right to change limits, test conditions and dimensions 0,001 0,01 0,1 0,00001 0,0001 0,001 0,01 0,1 1 10 0,01 0,1 t s K/W 0,1 1 10 100 1000 100 CJIF A VF VR V pF V ZthJC TVJ = 125°C Single Pulse TVJ = 125°C 25°C DGS3-025AS Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage Fig. 3 typ. thermal impedance junction to case Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: conduction forward characteristics turn off characteristics turn on characteristics by majority + minority carriers V F (IF) extraction of excess carriers causes temperature dependant reverse recovery (t rr, IRM, Qrr) delayed saturation leads to VFR Rectifier Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity C J, see Fig. 2; not temperature dependant no turn on overvoltage peak GaAs Schottky Diode Outlines TO-252

1 Anode

3 Anode

4 Cathode

Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 Outline TO-220 Dim. Mil limeter Inches Min. Max. Min. Max. A 12.70 13.97 0.500 0.550 B 14.73 16.00 0.580 0.630 C 9.91 10.66 0.390 0.420 D 3.54 4.08 0.139 0.161 E 5.85 6.85 0.230 0.270 F 2.54 3.18 0.100 0.125 G 1.15 1.65 0.045 0.065 H 2.79 5.84 0.110 0.230 J 0.64 1.01 0.025 0.040 K 2.54 BSC 0.100 BSC M 4.32 4.82 0.170 0.190 N 1.14 1.39 0.045 0.055 Q 0.38 0.56 0.015 0.022 R 2.29 2.79 0.090 0.110