DGS3-01AS IXYS | Alldatasheet

Document overview

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Technical content

Features

  • Low forward voltage
  • Very high switching speed
  • Low junction capacity of GaAs - low reverse current peak at turn off
  • Soft turn off
  • Temperature independent switching behaviour
  • High temperature operation capability
  • Epoxy meets UL 94V-0

Applications

  • MHz switched mode power supplies (SMPS)
  • Small size SMPs
  • High frequency converters
  • Resonant converters Symbol Conditions Maximum Ratings IFAV TC = 25°C; DC 12 A IFAV TC = 90°C; DC 8.5 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz); sine 10 A TVJ -55...+175 °C Tstg -55...+150 °C Ptot TC = 25°C 18 W IFAV = 12 A VRRM = 100 V C Junction= 19 pF Symbol Conditions Characteristic Values typ. max. IR ① VR = VRRM ;T VJ = 25°C 0.7 mA VR = VRRM ;T VJ = 125°C 0.7 mA VF IF = 2 A; T VJ = 125°C 0.54 V IF = 2 A; T VJ = 25°C 0.62 0.8 V C J VR = 50 V; T VJ = 125°C 19 pF R thJC 8.5 K/W Weight 0.3 g Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to DIN/IEC 747 and per diode unless otherwise specified A C A = Anode, C = Cathode , TAB = Cathode A TO-252 AA A C (TAB)

© 2002 IXYS All rights reserved 2 - 2 Advanced Technical Information DGS 3-01AS 238IXYS reserve the right to change limits, conditions and dimensions. TO-252 AA Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115

1 Anode

3 Anode

4 Cathode

0,01 0,1 0,00001 0,0001 0,001 0,01 0,1 1 10 0,01 0,1 t s K/W 0,1 1 10 100 1000 100C JIF A VF VR V pF V ZthJC TVJ = 125°C 20030 Single Pulse TVJ = 125°C 25°C DGS 3-01AS Fig. 1typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage Fig. 3 typ. thermal impedance junction to case tbd Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: conduction forward characteristics turn off characteristics turn on characteristics by majority + minority carriers V F (IF) extraction of excess carriers causes temperature dependant reverse recovery (t rr, IRM , Qrr) delayed saturation leads to VFR Rectifier Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity C J, see Fig. 2; not temperature dependant no turn on overvoltage peak GaAs Schottky Diode