DESC29-06AC IXYS | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
/G6cSilicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation /G6cLow cathode to tab capacitance (<15pF) /G6cPlanar passivated chips /G6cVery short recovery time /G6cExtremely low switching losses /G6cLow IRM-values /G6cSoft recovery behaviour /G6cEpoxy meets UL 94V-0
Applications
/G6cAntiparallel diode for high frequency switching devices /G6cAntisaturation diode /G6cSnubber diode /G6cFree wheeling diode in converters and motor control circuits /G6cRectifiers in switch mode power supplies (SMPS) /G6cInductive heating /G6cUninterruptible power supplies (UPS) /G6cUltrasonic cleaners and welders Advantages /G6cAvalanche voltage rated for reliable operation /G6cSoft reverse recovery for low EMI/RFI /G6cLow IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IFAV = 2x15 A VRRM = 600 V trr = 35 ns VRSM VRRM Type V V 600 600 DSEC29-06AC © 2000 IXYS All rights reserved DSEC29-06ACADVANCE TECHNICAL INFORMATION * Patent pending ISOPLUS220TM Isolated back surface * Symbol Conditions Maximum Ratings IFRMS 35 A IFAVM TC = 140°C; rectangular, d = 0.5 15 A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A EAS TVJ = 25°C; non-repetitive 0.1 mJ IAS = 0.9 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A TVJ -55...+175 °C TVJM 175 °C Tstg -55...+150 °C Ptot TC = 25°C 95 W VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2500 V~ Weight typical 3 g Symbol Conditions Characteristic Values typ. max. IR /G81 TVJ = 25°C V R = VRRM 100 µA TVJ = 150°C V R = VRRM 0.5 mA VF /G82 IF = 15 A; T VJ = 150°C 1.49 V TVJ = 25°C 2.04 V RthJC 1.6 K/W RthCH 0.6 K/W trr IF = 1 A; -di/dt = 100 A/µs; 35 ns VR = 30 V; TVJ = 25°C IRM VR = 100 V; I F = 25 A; -diF/dt = 100 A/µs 4 4.9 A TVJ = 100°C 31 2 98785 (12/00)
Note: All terminals are solder plated. 1 - Anode 2 - Common Cathode 3 - Anode