DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
- Isolated Substrate High isolation voltage (>2500V) Excellent thermal transfer Increased temperature and power cycling capability
- IXYS advanced low Q g process
- Low gate charge and capacitances Easier to drive Faster switching
- Low R DS(on)
- Very low insertion inductance (<2nH)
- No beryllium oxide (BeO) or other haz ardous materials Advantages
- Optimized for RF and high speed switching at frequencies to 50MHz
- Easy to mount—no insulators needed
- High power density NChannel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching 50MHz Maximum Frequency DRAIN SG1 SG2 GATE SD1 SD2
Symbol Test Conditions Characteristic Values min. typ. max. RG 0.2 Ω Ciss 3000 pF Coss VGS = 0 V, V DS = 0.8 V DSS(max) , f = 1 MHz 93 pF Crss 9 pF Cstray Back Metal to any Pin 33 pF Td(on) 5 ns Ton VGS = 15 V, V DS = 0.8 V DSS ID = 0.5 IDM RG = 0.2 Ω (External) 3 ns Td(off) 5 ns Toff 8 ns Qg(on) 57 nC Qgs VGS = 10 V, V DS = 0.5 V DSS ID = 0.5 ID25 24 nC Qgd 22 nC (TJ = 25°C unless otherwise specified ) SourceQDrain Diode Characteristic Values (TJ = 25°C unless otherwise specified ) Symbol Test Conditions min. typ. max. IS VGS = 0 V 15 A ISM Repetitive; pulse width limited by T JM 72 A VSD 1.4 V Trr 250 ns IF = IS, V GS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% QRM IF = IS, di/dt = 100A/µs, VR = 100V 0.66 µC IRM 7.6 A IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5 ,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5 ,486,715 5,381,025 5,640,045 For detailed device mounting and installation instructions, see the “ Device Installation & Mounting Instructions ” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable . IXYSRF reserves the right to make changes to information pub lished in this document at any time and without notice.
Fig. 1 Fig. 2 Fig. 3 Fig. 5 Fig. 4 Maximum Transient Thermal Impedance 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 Pulse Time Seconds Z(th)JC ºC/W Fig. 6 Typical Transfer Characteristics VDS = 50V 6 7 8 9 10 11 12 VGS , Gate to Source (V) ID, Drain Current (A) Typical Output Characteristics 0 10 20 30 40 50 VDS , Drain to Source (V) ID, Drain Currnet (A) 7.5V 6.5V 12V 10V Gate Charge vs. Gate to Source Voltage 0 20 40 60 80 100 Gate Charge (nC) VGS ,Gate to Source (V) Extended Typical Output Characteristics 0 20 40 60 80 100 VDS , Drain to Source (V) ID, Drain Currnet (A) 7.5V 12V 10V COSS CRSS CISS Capacitance vs. V DS 100 1000 10000 0 100 200 300 400 500 600 700 800 VDS , Drain to Source (V) Capacitance (pF)
Fig. 7 Fig. 8 Fig. 9 Fig. 10 Transfer Curve vs. Temperature VDS = 50V 5 7 9 11 13 VGS , Gate to Source (V) ID, Drain Current (A) 150°C 25°C 40°C Normalized V GS(TH) vs. Temperature ID = 1mA 0.6 0.7 0.8 0.9 1.1 1.2 40 20 0 20 40 60 80 100 120 140 160 Temperature °C VGS(TH) Normalized Normalized R DS(ON) vs. Temperature ID = 7.5A V GS = 10V 0.5 0.75 1.25 1.5 1.75 2.25 2.5 40 20 0 20 40 60 80 100 120 140 160 Temperature (°C) RDS(ON) Normalized Normalized G FS vs. Temperature ID = 7.5A V DS = 50V 0.75 0.8 0.85 0.9 0.95 1.05 1.1 40 20 0 20 40 60 80 100 120 140 160 Temperature (°C) GFS Normalized
Fig. 11 Package Drawing Source Source Source Source Gate Drain
102N15A DEQSERIES SPICE Model The DESERIES SPICE Model is illustrated in Figure 12. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, L S and L D. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C OSS , and reverse transfer capacitance, C RSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 12 DESERIES SPICE Model Net List: .SUBCKT 102N15A 10 20 30 * TERMINALS: D G S * 1000 Volt 15 Amp 1 ohm NChannel Power MOSFET * REV.A 021012 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.2 DON 6 2 D1 ROFF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 3.0N RD 4 1 1.0 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS An IXYS Company Fort Collins, CO USA 80526 9704931901 Fax: 9702323025 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com 150C Rev. 1 © 2012 IXYS RF