DE375-102N10A IXYS | Alldatasheet

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Technical content

Features

  • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances − easier to drive − faster switching
  • Low RDS(on)
  • Very low insertion inductance (<2nH)
  • No beryllium oxide (BeO) or other hazardous materials Advantages
  • Optimized for RF and high speed switching at frequencies to 50MHz
  • Easy to mount—no insulators needed
  • High power density N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching DRAIN SG1 SG2 GATE SD1 SD2

Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. RG 0.3 Ω Ciss 2900 pF Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz 100 pF Crss 25 pF Td(on) 5 ns Ton VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) 3 ns Td(off) 5 ns Toff 8 ns Qg(on) 90 nC Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 30 nC Qgd 40 nC Cstray Back Metal to any Pin 33 pF Source-Drain Diode - Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 10 A ISM Repetitive; pulse width limited by TJM 80 A VSD 1.5 V Trr 200 ns IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% QRM IF = IS, -di/dt = 100A/µs, VR = 100V 0.6 µC IRM 7 A IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 (1) These parameters apply to the pack age, not individual MOSFET devices. For detailed device mounting and installation instructions, see the “DE- Series MOSFET Mounting Instructions” technical note on IXYS RF’s web site at www.ixysrf.com/Technical_Support/App_notes.html

2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com 102N10A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan- sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are mod- eled with reversed biased diodes. This provides a varactor type response nec- essary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: .SUBCKT 102N10A 10 20 30 * TERMINALS: D G S * 1000 Volt 10 Amp 1.2 ohm N-Channel Power MOSFET * REV.A 05-23-00 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.5 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 3.0N RD 4 1 1.5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0223 Rev 6 © 2003 IXYS RF