DE150-201N09A IXYS | Alldatasheet

Document overview

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Technical content

Features

  • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances − easier to drive − faster switching
  • Low RDS(on)
  • Very low insertion inductance (<2nH)
  • No beryllium oxide (BeO) or other hazardous materials Advantages
  • Optimized for RF and high speed switching at frequencies to >100MHz
  • Easy to mount—no insulators needed
  • High power density N-Channel Enhancement Mode Avalanche Rated Low Q g and Rg High dv/dt Nanosecond Switching DRAIN SG1 SG2 GATE SD1 SD2

Directed Energy, Inc. An IXYS Company Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. RG 5 Ω Ciss 600 pF Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz 105 pF Crss 12 pF Td(on) 4 ns Ton VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) 4 ns Td(off) 4 ns Toff 4 ns Qg(on) 16 39 nC Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 3.0 5.7 nC Qgd 8.0 20 nC RthJHS 1.5 K/W Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 9.0 A ISM Repetitive; pulse width limited by TJM 54 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% 1.4 V Trr 450 ns Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045

Directed Energy, Inc. An IXYS Company Directed Energy, Inc. An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com 201N09A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan- sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are mod- eled with reversed biased diodes. This provides a varactor type response nec- essary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: *SYM=POWMOSN .SUBCKT 201N09 10 20 30 * TERMINALS: D G S * 200 Volt 9 Amp .4 ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 .6N RD 4 1 .4 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=2.7) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=500 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=500 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0241 Rev 1 © 2001 Directed Energy, Inc.