DE150-101N09A IXYS | Alldatasheet

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VDSS 9 =C 100CVC ID25 9 =C 9.0CAC RDS(on)9 ≤C 0.16CΩΩ ΩΩ C PDC9 =C 200CWCSymbolC TestCConditionsC MaximumCRatingsCC V DSS 9 TJ9=925°C9to9150°C99 1009 V9 VDGR 9 TJ9=925°C9to9150°C;9R GS 9=919M Ω 99 1009 V VGS 9 Continuous9 ±209 V9 VGSM 9 Transient9 ±309 V9 ID25 9 Tc9=925°C99 9.09 A9 IDM 9 Tc9=925°C,9pulse9width9limited9by9T JM 99 549 A9 IAR 9 Tc9=925°C99 149 A9 EAR 9 Tc9=925°C99 7.59 mJ9 C dv/dtCC IS9≤ IDM ,9di/dt9 ≤ 9100A/ µs,9V DD 9≤9V DSS ,99 Tj9≤9150°C,9R G9=90.2 Ω 99

5.59 V/ns9

IS9=909 >2009 V/ns9 PDC 9 9 2009 W9 PDHS 9 Tc9=925°C9 Derate94.4W/°C9above925°C9 809 W9 PDAMB 9 Tc9=925°C99 3.59 W9 RthJC 9 9 0.749 C/W9 RthJHS 9 9 1.509 C/W9 SymbolC TestCConditions CharacteristicCValues min.C typ.C max.C 9 VDSS 9 VGS 9=909V,9I D9=939ma9 1009 9 9 V9 VGS(th) 9 VDS 9=9V GS ,9I D9=949ma9 29 2.89 9 V9 IGSS 9 VGS 9=9±209V DC ,9V DS 9=909 9 9 ±1009 nA9 IDSS 9 VDS 9=90.89V DSS 9T J9=925°C99 VGS 9=90999999999999T J9=9125°C99 9 9 259 2509 µA9 µA9 RDS(on) 9 VGS 9=9159V,9I D9=90.5I D25 9 Pulse9test,9t9 ≤9300 µS,9duty9cycle9d9 ≤92%99 9 0.169 Ω 9 gfs 9 VDS 9=9159V,9I D9=90.5I D25 ,9pulse9test9 2.59 3.09 9 S9 TJ9 9 7559 9 +1759 °C999 TJM9 9 9 9 1759 9 °C9999 Tstg 9 9 7559 9 +1759 °C99999 TL9 1.6mm(0.0639in)9from9case9for9109s9 9 3009 9 °C999999 Weight9 9 9 29 9 g9 TJ9=925°C9unless9otherwise9specified999 9 FeaturesC

  • Isolated9Substrate9 − high9isolation9voltage9(>2500V)9 − excellent9thermal9transfer9 − Increased9temperature9and9power9 cycling9capability999
  • IXYS9advanced9low9Q g9process9
  • Low9gate9charge9and9capacitances9 − easier9to9drive9 − faster9switching9
  • Low9R DS(on) 9
  • Very9low9insertion9inductance9(<2nH)9
  • No9beryllium9oxide9(BeO)9or9other9 hazardous9materials99 AdvantagesC
  • Optimized9for9RF9and9high9speed9 switching9at9frequencies9to9>100MHz9
  • Easy9to9mount—no9insulators9needed9
  • High9power9density9 N7Channel9Enhancement9Mode9 Low9Q g9and9R g9 High9dv/dt9 Nanosecond9Switching9 Ideal9for9Class9C,9D,9&9E9Applications9 DRAIN SG1 SG2 GATE SD1 SD2

SymbolC TestCConditions CharacteristicCValues 99 min.C typ.C max.C 9 RG9 9 C C 59 Ω 9 Ciss 9 9 9 7009 9 pF9 Coss 9 VGS 9=909V,9V DS 9=90.89V DSS(max) ,99 f9=919MHz9 9 2009 9 pF9 Crss 9 9 9 309 9 pF9 Cstray 9 Back99Metal9to9any9Pin9 9 169 9 pF9 Td(on) 9 9 9 49 9 ns9 Ton 9 VGS 9=9159V,9V DS 9=90.89V DSS999 ID9=90.59I DM 99 RG9=90.29 Ω 9(External)99 9 49 9 ns9 Td(off) 9 9 49 9 ns9 Toff 9 9 9 49 9 ns9 Qg(on) 9 9 9 229 9 nC9 Qgs 9 VGS 9=9109V,9V DS 9=90.59V DSS999 ID9=90.59I D25 9,9Ig9=939ma9 9 3.49 9 nC9 Qgd 9 9 9 9.19 9 nC9 (TJ9=925°C9unless9otherwise9specified )9 99 9 SourceQDrainCDiodeC TJ9=925°C9unless9otherwise9specified )9 9 CharacteristicCValues 9 Symbol9 TestCConditions 9 min.C typ.C max.C 9 IS9 VGS 9=909V9 9 9 9.09 A9 ISM 9 Repetitive;9pulse9width9limited9by9T JM9 9 9 549 A9 VSD 9 IF9=9I S,9V GS 9=909V,9 Pulse9test,9t9 ≤93009 µs,9duty9cycle9 ≤92%99 9 1.59 V9 Trr 9 9 9 3009 9 ns9 IXYS9RF9reserves9the9right9to9change9limits,9test9conditions9and9dimensions.9 IXYS9RF9MOSFETS9are9covered9by9one9or9more9of9the9following9U.S.9patents:9 4,835,5929 4,860,0729 4,881,1069 4,891,6869 4,931,8449 5 ,017,5089 5,034,7969 5,049,9619 5,063,3079 5,187,1179 5,237,4819 5 ,486,7159 5,381,0259 5,640,0459 9 9 9 9 CAUTION:9Operation9at9or9above9the9Maximum9Ratings9values9may9impact9device9reliability9or9cause9permanent9damage9to9the9device.9 Information9in9this9document9is9believed9to9be9accurate9and9reliable . IXYSRF9reserves9the9right9to9make9changes9to9information9pub7 lished9in9this9document9at9any9time9and9without9notice.9 For9detailed9device9mounting9and9installation9instructions,9see9the9“ Device Installation & Mounting Instructions ”9technical9note9on9the9 IXYSRF9web9site9at;99 http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf9

VDS Cvs.Capacitance 100 1000 10000 0 10 20 30 40 50 60 70 80 9V DS 9Voltage9(V) Capacitance9(pf) TypicalCTransferCCharacteristics VDS 9=930V999PW9=920µS VGS ,9Gate7to9Source9Voltage9(V) ID,9Drain9Current9(A) ExtendedCTypicalCOutputCCharacteristics 0 10 20 30 40 50 VDS ,9Drain7to7Source9Voltage9(V) ID,9Drain9Currnet9(A) TypicalCOutputCCharacteristics 0 5 10 15 20 25 30 35 40 45 50 VDS ,9Drain7to7Source9Voltage9(V) ID,9Drain9Currnet9(A) GateCChargeCvs.CGateQtoQSourceCVoltage VDS 9=950V99999I D9=94.5A 0 5 10 15 20 25 30 35 Gate9Charge9(nC) Gate7to7Source9Voltage9(V) Fig.919 Fig.929 Fig.939 Fig.949 Fig.959 TopCCCCCCCCCC10VC CCCCCCCCCCCCCCCCCCC9VC CCCCCCCCCCCCCCCCCCC8VC CCCCCCCCCCCCCCCCCCC7VC CCCCCCCCCCCCCCCC6.5VC CCCCCCCCCCCCCCCCCCC6VC CCCCCCCCCCCCCCCC5.5VC CCCCCCCCCCCCCCCCCCC5VC CCCCCCCCCCCCCCCC4.5VC BottomCCCCCC4VC 4.5V9 4V9 5.5V9 5V9 6V9 6.5V9 7V9 to99 10V9 Ciss9 Coss9 Crss9

Fig.C6CPackageCDrawingC SourceC SourceC SourceC SourceC GateC DrainC

101N09ACDEQSERIESCSPICECModelC The9DE7SERIES9SPICE9Model9is9illustrated9in9Figure97.9The9model9is9an9expansion9of9 the9SPICE9level939MOSFET9model.9It9includes9the9stray9inductive9terms9L G,9L S9and9L D.9 Rd9is9the9R DS(ON) 9of9the9device,9Rds9is9the9resistive9leakage9term.9The9output9capaci7 tance,9C OSS ,9and9reverse9transfer9capacitance,9C RSS 9are9modeled9with9reversed9biased9 diodes.9This9provides9a9varactor9type9response9necessary9for9a9high9power9device9 model.9The9turn9on9delay9and9the9turn9off9delay9are9adjusted9via9Ron9and9Roff.9 Figure979DE7SERIES9SPICE9Model9 This9SPICE9model9may9be9downloaded9as9a9text9file9from9the9IXYSRF9web9site9at99 http://www.ixysrf.com/products/switch_mode.html9 http://www.ixysrf.com/spice/de1507101n09a.html9 Net9List:9 *SYM=POWMOSN9 .SUBCKT9101N09A99109209309 *99999TERMINALS:99D99G99S9 *991009Volt9999Amp99.169ohm99N7Channel9Power9MOSFET9910730720019 M199919299399399DMOS99L=1U9W=1U9 RON9959691.59 DON9969299D19 ROF995979.29 DOF9929799D19 D1CRS92989D29 D2CRS91989D29 CGS9929399.7N9 RD99949199.169 DCOS93919D39 RDS991993995.0MEG9 LS9939309.1N9 LD991094991N9 LG992095991N9 .MODEL9DMOS9NMOS9(LEVEL=39VTO=3.09KP=9.0)9 .MODEL9D19D9(IS=.5F9CJO=1P9BV=1009M=.59VJ=.69TT=1N)9 .MODEL9D29D9(IS=.5F9CJO=1100P9BV=1009M=.59VJ=.69TT=1N9RS=10M)99 .MODEL9D39D9(IS=.5F9CJO=300P9BV=1009M=.39VJ=.49TT=400N9RS=10M)9 .ENDS9 An999 IXYS Company9 24019Research9Blvd.,9Suite91089 Fort9Collins,9CO99USA9805269 9707493719019Fax:99707493719039 Email:9sales@ixyscolorado.com9 Web:9http://www.ixyscolorado.com Doc9#9200702429Rev959 ©920099IXYS9RF99