DAA10EM1800PZ IXYS | Alldatasheet

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Technical content

Backside: anode FAV FVV 1.14 RRM 1800 V= V I= A Features / Advantages: Applications: Package:

  • Avalanche rated
  • Planar passivated chips
  • Very low leakage current
  • Very low forward voltage drop
  • Improved thermal behaviour
  • Diode for main rectification
  • For single and three phase bridge configurations TO-263 (D2Pak-HV)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • High creepage distance between terminals IXYS reserves the right to change limits, conditions and dimensions. 20131108aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

V = V A²s A²s A²s A²s Symbol Definition Ratings typ. max. IR V I A VF 1.21 R 1.5 K/W R min. VRSM V 10T = 25°CVJ T = °CVJ mA0.7V = VR T = 25°CVJI = AF V T = °CC 150 Ptot 100 WT = 25°CC R K/W 1800 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.43 T = 25°CVJ 150 VF0 V0.81T = °CVJ 175 rF 32 mΩ V1.14T = °CVJI = AF V 1.45 I = AF 20 I = AF 20 threshold voltage slope resistance for power loss calculation only µA 150 VRRM V1800max. repetitive reverse blocking voltage T = 25°CVJ CJ 4junction capacitance V = V;400 T = 25°Cf = 1 MHzR VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJmax. forward surge current T = °CVJ 150 I²t T = 45°Cvalue for fusing T = °C150 V = 0 VR V = 0 VR V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °CVJ 175 150 160 A A A A 130 140 115 105 1800 FAV d =rectangular 0.5 average forward current thermal resistance junction to casethJC thermal resistance case to heatsinkthCH Rectifier 1900 0.25 PRSM 1.6max. surge reverse dissipation t = 10 µsp T = °CVJ 175 kW IXYS reserves the right to change limits, conditions and dimensions. 20131108aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

Part No. Logo Assembly Code XXXXXXXXX IXYS Zyyww 000000 Assembly Line D A A EM 1800 PZ Part number Diode Avalanche Rectifier (up to 1800V) Single Diode TO-263AB (D2Pak) (2HV) Current Rating [A] Reverse Voltage [V] Package Top °C TVJ °C175virtual junction temperature -55 Weight g1.5 Symbol Definition typ. max.min.Conditions operation temperature Unit FC N60mounting force with clip 20 mm mm 4.2 4.7 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current 35 Aper terminal 150-55 terminal to terminal TO-263 (D2Pak-HV) Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering DAA10EM1800PZ 513894Tape & Reel 800DAA10EM1800PZStandard Tstg °C150storage temperature -55 threshold voltage V0.81 mΩ V0 max R0 max slope resistance * 10.2 Equivalent Circuits for Simulation T =VJ I V0 R0 Rectifier 175 °C* on die level IXYS reserves the right to change limits, conditions and dimensions. 20131108aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved

W A c L 2x b2 2x b H Supplier Option E 2x e L1D min max min max A 4.06 4.83 0.160 0.190 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.50 0.245 0.335 e H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 W typ. 0.02 0.040 typ. 0.0008 0.002 All dimensions conform with and/or within JEDEC standa rd. 2.3 0.091 2,54 BSC 0,100 BSC 4.28 0.169 Dim. Millimeter Inches typ. 0.10 typ. 0.004 2.41 0.095 3.81 (0.150) 1.78 (0.07) 2.54 (0.100) 3.05 (0.120) 10.92 (0.430) 9.02 (0.355) mm (Inches) Recommended min. foot print Outlines TO-263 (D2Pak-HV) IXYS reserves the right to change limits, conditions and dimensions. 20131108aData according to IEC 60747and per semiconductor unless otherwise specified © 2013 IXYS all rights reserved