CS630 IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Thyristor for line frequency
  • International standard package
  • Long-term stability of blocking voltages
  • Gate and auxiliary cathode pin connection
  • Amplifying gate Typical Applications
  • DC Motor control
  • Power converter
  • AC power controller Phase Control Thyristor CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 V Symbol Test Conditions Maximum Ratings ITRMS 1400 A ITAVM TC = 85°C; 180° sine 630 A ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 11500 A VR = 0 t = 8.3 ms (60 Hz), sine 12600 A TVJ = TVJM t = 10 ms (50 Hz), sine 10500 A VR = 0 t = 8.3 ms (60 Hz), sine 11500 A ∫∫∫∫∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 661250 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 793800 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 551250 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 661250 A 2s (di/dt)cr TVJ = TVJM repetitive, IT = 2500 A 320 A/ µs f = 5 Hz, tP =200 ms VD = 0.67 VDRM IG = 2 A diG /dt = 2 A/µs (dv/dt)cr TVJ = TVJM ;V DR = 2/3 VDRM 1000 V/ µs R GK = ∞ ; method 1 (linear voltage rise) P GM TVJ = TVJM tP = 30 µs 120 W IT = ITAVM tP = 500 µs6 0 W tP = 10 ms 16 W VRGM 10 V TVJ -40...+125 °C TVJM 125 °C Tstg -40...+ 50 °C M d Mounting force 16.0 .. 19.0 kN Weight 210 g 3 4 VRSM V RRM Type VDSM V DRM VV 1200 1200 CS 630-12io1 1400 1400 CS 630-14io1 1600 1600 CS 630-16io1 2 3 Data according to DIN/IEC 747-6 IXYS reserves the right to change limits, test conditions and dimensions

IXYS reserves the right to change limits, test conditions, and dimensions. Dimensions in mm (1 mm = 0.0394") CS 630 Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM ; VR = VRRM ; VD = VDRM ≤ 50 mA V T IT = 3.14 ITAVM ;TVJ = 25°C ≤ 1.95 V V T0 For power-loss calculations only (TVJ = 125°C) 1.05 V rT 0.45 mW V GT VD = 12 V; T VJ = 25°C ≤ 2.5 V IGT VD = 12 V; T VJ = 25°C ≤ 280 mA V GD TVJ = TVJM ;V D = 2/3 VDRM ≤ 0.25 V IL TVJ = 25°C; tP = 10 µs ≤ 1.5 A IG = 2 A; diG /dt = 2 A/µs IH TVJ = 25°C; VD = 12 V; RGK = ∞≤ 0.75 A tgd TVJ = 25°C; VD = 500 V ≤ 2.0 µs IG = 2 A; diG /dt = 2 A/µs tq TVJ = TVJM ; IT = 630 A, tP = 200 µs; di/dt = -10 A/µs typ. 150 µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM R thJC 0.035 K/W