CS45-16IO1 IXYS | Alldatasheet

Document overview

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Technical content

Features

 Thyristor for line frequency  International standard package JEDEC TO-247  Planar passivated chip  Long-term stability of blocking currents and voltages  Version AR isolated and UL registered E153432 G Epoxy meets UL 94V-0

Applications

 Motor control  Power converter  AC power controller  Switch-mode and resonant mode power supplies  Light and temperature control Advantages  Easy to mount with 1 screw (isolated mounting screw hole)  Space and weight savings  Simple mounting  Improved temperature and power cycling Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions Phase Control Thyristor VRSM VRRM Type VDSM VDRM VV 900 800 CS 45-08io1 1300 1200 CS 45-12io1 1700 1600 CS 45-16io1 CS 45-16io1R 030 A C G C = Cathode, A = Anode, G = Gate TO-247 AD ISOPLUS 247 TM Version io1 Version io1R G C A (TAB) A G C A Isolated back surface ** Patent pending VRRM = 800-1600 V IT(RMS) = 75 A IT(AV)M = 48 A

© 2000 IXYS All rights reserved 2 - 3 CS 45 10 100 1000 100 1000 µs tgd IG 1 10 100 1000 10000 0.1 IG VG mA V mA typ. Limit Symbol Conditions Characteristic Values IR , ID TVJ = TVJM ; VR = VRRM ; VD = VDRM /G163 5m A VT IT = 80 A; TVJ = 25/G176C /G1631.64 V VT0 For power-loss calculations only (TVJ = 125°C) 0.85 V rT 11 m /G87 VGT VD = 6 V; T VJ = 25°C /G163 1.5 V TVJ = -40°C /G163 1.6 V IGT VD = 6 V; T VJ = 25°C /G163 100 mA TVJ = -40°C /G163 200 mA VGD TVJ = TVJM ;V D = 2/3 VDRM /G163 0.2 V IGD /G163 10 mA IL TVJ = 25°C; tP = 10 /G109s /G163 150 mA IG = 0.3 A; diG /dt = 0.3 A/µs IH TVJ = 25°C; VD = 6 V; RGK =/G32/G165 /G163 100 mA tgd TVJ = 25°C; VD = ½ VDRM /G163 2µ s IG = 0.3 A; diG /dt = 0.3 A/µs R thJC DC current 0.62 K/W R thJH DC current 0.82 K/W a Max. acceleration, 50 Hz 50 m/s 2 Fig. 1 Gate trigger range Fig. 2 Gate controlled delay time tgd TVJ = 25°C IGD , TVJ =125°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 1: IGT , TVJ = 125°C 2: IGT , TVJ = 25°C 3: IGT , TVJ = -40°C TO-247 AD and ISOPLUS 247 TM Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D* 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 * ISOPLUS 247 TM without hole

© 2000 IXYS All rights reserved 3 - 3 CS 45 0 20 40 60 80 100 120 IT(AV)M 0 1 02 03 04 05 06 07 0 100 120 140 0 25 50 75 100 125 150 0.001 0.01 0.1 1 100 200 300 400 100 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 ITSM IT A VT t s PT W IT(AV)M A Tamb t s ZthJC K/W V A 12 3 4 5 6 7 8 9 1 0 1000 I2t t A2s Tcase A ms 500 2000 Fig. 8 Transient thermal impedance junction to case Fig. 3 Forward characteristics Fig. 4 Surge overload current ITSM : crest value, t: duration Fig. 5 I2t versus time (1-10 ms) Fig. 6 Power dissipation versus forward current and ambient temperatureFig. 7 Max. forward current at case temperature TVJ = 125°C TVJ = 45°C 50Hz, 80%VRRM TVJ = 125°C DC 180° sin 120° 60° 30° R thKA :

0.1 K/W

0.5 K/W

1 K/W

2 K/W

4 K/W

10 K/W

TVJ = 45°C DC 180° sin 120° 60° 30° 30° 60° 120° 180° DC VR = 0 V TVJ = 25°C TVJ = 125°C R thJC for various conduction angles d: dR thJC (K/W) DC 0.62 180/G176 0.71 120/G176 0.748 60/G176 0.793 30/G176 0.817 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.206 0.013 2 0.362 0.118 3 0.052 1.488