CS300-12IO3 IXYS | Alldatasheet

Document overview

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Technical content

Features

G Thyristor for line frequencies G International flat base package G Planar glassivated chip G Long-term stability of blocking currents and voltages

Applications

G Space and weight savings G Simple mounting G Improved temperature and power cycling Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions CS 300 1 = Anode, 2 = Cathode, 3 = Gate, 4 = Auxiliary Cathode Not for new application

© 1999 IXYS All rights reserved 2 - 3 250 500 750 1000 1250 10-2 10-1 100 101 10-1 100 101 102 0 100 200 300 400 500 ITtgdVG V IG IG VT Aµs A VmA Symbol Test Conditions Characteristic Values IR , ID TVJ = TVJM ; VR = VRRM ; VD = VDRM ≤ 40 mA VT IT = 1000 A; TVJ = 25°C ≤ 1.43 V VT0 For power-loss calculations only (TVJ = 125°C) 1.0 V rT 0.43 m Ω VGT VD = 6 V; T VJ = 25°C ≤ 2.0 V TVJ = -40°C ≤ 2.8 V IGT VD = 6 V; T VJ = 25°C ≤ 150 mA TVJ = -40°C ≤ 250 mA VGD TVJ = TVJM ;V D = 2/3 VDRM ≤ 0.2 V IGD ≤ 1m A IL TVJ = 25°C; tP = 10 µs ≤ 100 mA IG = 0.7 A; diG /dt = 0.7 A/µs IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 100 mA tgd TVJ = 25°C; VD = 1/2 VDRM ≤ 2 µs IG = 0.7 A; diG /dt = 0.7 A/µs tq TVJ = TVJM ; IT =330 A, tP = 300 µs; di/dt = -20 A/µs typ. 150 µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM R thJC DC current 0.09 K/W R thJH DC current 0.12 K/W dS Creepage distance on surface 1.55 mm dA Strike distance through air 1.55 mm a Max. acceleration, 50 Hz 50 m/s 2 CS 300 Fig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe Fig. 2 Gate controlled delay time t gd a = limit; b = typical Fig. 3 On-state characteristics a = typical; b = limit b a a b TVJ= 125°C TVJ= 25°C IGT : TVJ= 0°C IGT : TVJ= 25°C IGT : TVJ= -40°C B B B A IGD : TVJ= 25°C IGD : TVJ=125°C C

© 1999 IXYS All rights reserved 3 - 3 CS 300 Fig. 6 Power dissipation versus on-state current and ambient temperature (sinusoidal current) 20 40 60 80 100 120 140 100 200 300 400 500 600 700 0 100 200 300 400 500 600 100 200 300 400 500 600 700 107 116 125 PT W IT(AV)M A Tamb PT W Tc 20 40 60 80 100 120 140 100 200 300 400 500 600 700 0 100 200 300 400 500 600 100 200 300 400 500 600 700 107 116 125 PT W IT(AV)M A Tamb PT W Tc 0 50 100 150 100 200 300 400 500 10-3 10-2 10-1 100 101 1000 2000 3000 4000 5000 6000 7000 8000 9000 IT(AV)M ITSM A t Tc A s °C Fig. 7 Power dissipation versus on-state current and ambient temperature (rectangular current) Fig. 4 Surge overload current ITSM : crest value, t: duration Fig. 5 Maximum forward current at case temperature 180° sine VR = 0 V TVJ = 45°C TVJ = 125°C R thCA = 0.03 K/W+RthHA R thCA :

0.07 K/W

0.12 K/W

.165 K/W

0.28 K/W

0.85 k/W DC 180°sin 120°sin 90° sin 60° sin 30° sin DC 180° 120° 90° 60° 30° R thCA = 0.03 K/W+RthHA R thCA :