CS23 IXYS | Alldatasheet

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Technical content

Features

G Thyristor for line frequencies G International standard package JEDEC TO-208AA G Planar glassivated chip G Long-term stability of blocking currents and voltages

Applications

G Space and weight savings G Simple mounting G Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions CS 23 740 1 2 TO-208AA (TO-48) 1 = Anode, 2 = Cathode, 3 = Gate 1 M6

© 2000 IXYS All rights reserved 2 - 3 Symbol Test Conditions Characteristic Values IR , ID TVJ = TVJM ; VR = VRRM ; VD = VDRM /G163 3m A VT IT = 80 A; TVJ = 25/G176C /G163 1.8 V VT0 For power-loss calculations only (TVJ = 125/G176C) 1.0 V rT 10 m /G87 VGT VD = 6 V; T VJ = 25/G176C /G163 2.5 V TVJ = -40/G176C /G163 3.5 V IGT VD = 6 V; T VJ = 25/G176C /G163 50 mA TVJ = -40/G176C /G163 80 mA VGD TVJ = TVJM ;V D = 2/3 VDRM /G163 0.2 V IGD /G163 1m A IL TVJ = 25/G176C; tP = 10 /G109s /G163 200 mA IG = 0.15 A; diG /dt = 0.15 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 /G163 100 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM /G163 2 /G109s IG = 0.15 A; diG /dt = 0.15 A//G109s tq TVJ = TVJM ; IT = 25 A, tP = 300 /G109s; di/dt = -20 A//G109s typ. 60 /G109s VR = 100 V; dv/dt = 20 V//G109s; VD = 2/3 VDRM R thJC DC current 1.0 K/W R thJH DC current 1.61 K/W dS Creepage distance on surface 1.5 mm dA Strike distance through air 1.5 mm a Max. acceleration, 50 Hz 50 m/s 2 Accessories: Nut M6 DIN 439/SW14 Lock washer A6 DIN 128 CS 23 Fig. 2 Gate controlled delay time tgd Fig. 3 On-state characteristicsFig. 1 Gate voltage and gate current Triggering: A = no; B = possible; C = safe 100 120 10-2 10-1 100 101 10-1 100 101 102 0 25 50 75 100 ITtgdVG V IG t VT A/c109 s mA A V lim. typ. typ. lim. TVJ= 125°C TVJ= 25°C IGD : TVJ= 25°C IGD : TVJ=125°C A IGT : TVJ= 25°C IGT : TVJ= 0°C B B B C IGT : TVJ= -40°C

© 2000 IXYS All rights reserved 3 - 3 0 50 100 150 23 4 5 6 7 8 911 0 200 400 600 800 100 1000 10-3 10-2 10-1 100 101 100 200 300 400 500 0 1 02 03 04 05 06 0 50 100 1500 10-3 10-2 10-1 100 101 102 103 104 IT(AV)M I2tITSM A t t Tc PT W IT(AV)M A Tamb t s ZthJH K/W AA2s s ms °C CS 23 Fig. 8 Transient thermal impedance junction to heatsink Fig. 4 Surge overload current ITSM : crest value, t: duration Fig. 5 I2t versus time (1-10 ms) Fig. 6 Maximum forward current at case temperature 180/G176 sine R thJH for various conduction angles d: dR thJH (K/W) DC 1.61 180/G176 1.85 120/G176 2.03 60/G176 2.35 30/G176 2.60 Constants for ZthJH calculation: iR thi (K/W) t i (s) 1 0.224 0.003 2 0.132 0.028 3 0.321 0.216 4 0.522 1.1 5 0.249 4.2 6 0.162 43.2 Fig. 7 Power dissipation versus on-state current and ambient temperature 50Hz, 80%VRRM TVJ = 45°C TVJ = 125°C VR = 0 V TVJ = 45°C TVJ = 125°C DC 180° sin 120° 60° 30° R thJA :

1.9 K/W

2.3 K/W

2.7 K/W

4.3 K/W

6.1 K/W

d = DC d = 180° d = 120° d = 30° d = 60° ase