CS20 IXYS | Alldatasheet

Document overview

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Technical content

Features

G Thyristor for line frequency G International standard package JEDEC TO-247 G Planar passivated chip G Long-term stability of blocking currents and voltages G Epoxy meets UL 94V-0

Applications

G Switch-mode and resonant mode power supplies G Light and temperature control Advantages G Easy to mount with 1 screw (isolated mounting screw hole) G Space and weight savings G Simple mounting G Improved temperature and power cyclingData according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions Phase Control Thyristor VRRM = 1200-1600 V IT(RMS) = 30 A IT(AV)M = 19 A VRSM VRRM Type VDSM VDRM VV 1200 1200 CS 20-12io1 1400 1400 CS 20-14io1 1600 1600 CS 20-16io1 A C G A G C TO-247 AD C = Cathode, A = Anode, G = Gate TAB = Anode (TAB) 235

© 2002 IXYS All rights reserved 2 - 3 CS 20 Symbol Test Conditions Characteristic Values IR , ID TVJ = TVJM ; VR = VRRM ; VD = VDRM /G163 2 mA VT IT = 25 A; TVJ = 25/G176C /G163 2.1 V VT0 For power-loss calculations only (TVJ = 125/G176C) 1.1 V rT 40 m /G87 VGT VD = 6 V; T VJ = 25/G176C /G163 1.0 V TVJ = -40/G176C /G163 1.2 V IGT VD = 6 V; T VJ = 25/G176C /G163 65 mA TVJ = -40/G176C /G163 80 mA TVJ = 125/G176C /G163 50 mA VGD TVJ = TVJM ;V D = 2/3 VDRM /G163 0.2 V IGD /G163 5m A IL TVJ = 25/G176C; tP = 10 /G109s /G163 150 mA IG = 0.3 A; diG /dt = 0.3 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 /G163 100 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM /G163 2 /G109s IG = 0.3 A; diG /dt = 0.3 A//G109s R thJC DC current 0.62 K/W R thJH DC current 0.82 K/W a Max. acceleration, 50 Hz 50 m/s 2 Fig. 1 Gate trigger range Fig. 2 Gate controlled delay time tgd 10 100 1000 100 1000 µs tgd IG 1 10 100 1000 10000 0.1 IG VG mA V 21 5 mA typ. Limit TVJ = 25°C IGD , TVJ =125°C 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 1: IGT , TVJ = 125°C 2: IGT , TVJ = 25°C 3: IGT , TVJ = -40°C TO-247 AD and ISOPLUS 247 TM Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D* 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 * ISOPLUS 247 TM without hole

© 2002 IXYS All rights reserved 3 - 3 CS 20 0 5 10 15 20 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 100 150 200 0123 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 ITSM IT A VT t s PT W IT(AV)M A Tamb t s ZthJC K/W V A 23 4 5 6 7 8 911 0 100 1000 I2t t A2s IT(AV)M Tcase A 0 20 40 60 80 100 120 ms Fig. 8 Transient thermal impedance junction to case Fig. 3 Forward characteristics Fig. 4 Surge overload current ITSM : crest value, t: duration Fig. 5 I2t versus time (1-10 ms) Fig. 6 Power dissipation versus forward current and ambient temperatureFig. 7 Max. forward current at case temperature TVJ = 125°C TVJ = 45°C 50Hz, 80%VRRM TVJ = 125°C DC 180° sin 120° 60° 30° R thHA :

1 K/W

2 K/W

3 K/W

5 K/W

7.5 K/W

15 K/W

TVJ = 45°C DC 180° sin 120° 60° 30° 30° 60° 120° 180° DC VR = 0 V 150 200 300 TVJ = 25°C TVJ = 125°C R thJC for various conduction angles d: dR thJC (K/W) DC 0.62 180/G176 0.71 120/G176 0.748 60/G176 0.793 30/G176 0.817 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.206 0.013 2 0.362 0.118 3 0.052 1.488