CS19 IXYS | Alldatasheet
Document overview
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Technical content
Features
/G6cSilicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation /G6cLow cathode-to-tab capacitance (15pF typical) /G6cPlanar passivated chips /G6cEpoxy meets UL 94V-0 /G6cHigh performance glass passivated chip /G6cLong-term stability of leakage current and blocking voltage
Applications
/G6cMotor control /G6cPower converter /G6cAC power controller /G6cLight and temperature control /G6cSCR for inrush current limiting in power supplies or AC drive Advantages /G6cSpace and weight savings /G6cSimple mounting 98789 (5/01)
Symbol Test Conditions Characteristic Values IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM ≤ 1m A VT IT = 30 A; TVJ = 25°C ≤ 1.65 V VT0 For power-loss calculations only (TVJ = 125°C) 0.87 V rT 29 m Ω VGT VD = 6 V; T VJ = 25°C ≤ 1.5 V TVJ = -40°C ≤ 2.5 V IGT VD = 6 V; T VJ = 25°C ≤ 25 mA TVJ = -40°C ≤ 50 mA VGD TVJ = TVJM;V D = 2/3 VDRM ≤ 0.2 V IGD ≤ 3m A IL TVJ = 25°C; tP = 10 µs ≤ 75 mA IG =0.08 A; diG/dt =0.08 A/µs IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 50 mA tgd TVJ = 25°C; VD = 1/2 VDRM ≤ 2 µs IG = 0.08 A; diG/dt = 0.08 A/µs RthJC DC current 1.7 K/W RthCK DC current typical 0.6 K/W a Max. acceleration, 50 Hz 50 m/s 2 ISOPLUS220 OUTLINE Note: All terminals are solder plated. 1 - Cathode 2 - Anode 3 - Gate